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FQD13N06LTM

Name: FQD13N06LTM
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 11A DPAK

Производитель
Мфр. Часть #FQD13N06LTM
Пакет TO-252-3,DPak(2Leads+Tab),SC-63
Лист данных FQD13N06LTM DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
Series	QFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	11A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	5V, 10V
RdsOn(Max)@IdVgs	115mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id	2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	6.4 nC @ 5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	350 pF @ 25 V
PowerDissipation(Max)	2.5W (Ta), 28W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	TO-252AA

Обзор

Description

The FQD13N06LTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 13A, it is suitable for a variety of switching and amplification tasks in electronic circuits. This MOSFET features low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency during operation.
The device is often used in power supplies, motor drives, and other applications where efficient switching is critical. Its TO-220 package allows for easy heat dissipation and mounting on circuit boards. The FQD13N06LTM is known for its fast switching speed and robustness, making it a popular choice among designers in automotive, industrial, and consumer electronics.
When implementing this MOSFET, it's essential to consider gate drive requirements, thermal management, and protective measures against over-voltage and over-current conditions to ensure reliable performance.

Features

The FQD13N06LTM is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The maximum continuous drain current (I_D) is 13A, making it suitable for moderate power applications.
3. R_DS(on): Offers a low on-resistance, typically around 0.07 ohms, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive with low-voltage logic.
5. Thermal Performance: It is packaged in a TO-220 format, facilitating effective heat dissipation.
6. Fast Switching: Capable of fast switching speeds, which is advantageous for applications in power management, switching power supplies, and motor control.
Overall, the FQD13N06LTM is ideal for applications requiring reliable performance in a compact, thermally efficient package.

Package

The FQD13N06LTM is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The FQD13N06LTM is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source, turning the device on.
2. Drain (D): This is the terminal where the current enters the MOSFET. The drain is connected to the load.
3. Source (S): This terminal allows current to exit the MOSFET. The source is typically connected to the ground or the negative terminal of the power supply.
The FQD13N06LTM is designed for efficient switching applications, with a maximum drain-source voltage of 60V and a continuous drain current rating of 13A. Its features make it suitable for various power management applications, including switching regulators and converters.

Manufacturer

The FQD13N06LTM is manufactured by Fairchild Semiconductor, which is a company specializing in the production of semiconductor products. Fairchild Semiconductor is known for its wide range of electronic components, particularly in power management, analog, and RF (radio frequency) devices. The company was established in 1957 and has played a significant role in the development of the semiconductor industry. It focuses on providing innovative solutions for various applications, including automotive, industrial, and consumer electronics. In 2016, Fairchild was acquired by ON Semiconductor, a larger semiconductor manufacturer that continues to produce and develop Fairchild’s product lines.

Application

The FQD13N06LTM is an N-channel MOSFET primarily used in power management applications. Key areas include DC-DC converters, motor drives, and power supplies due to its low on-resistance and high current capability. It's also suitable for switching applications in industrial equipment, consumer electronics, and renewable energy systems like solar inverters. Its efficiency makes it ideal for applications requiring high-speed switching and thermal performance.

Equivalent

The FQD13N06LTM is an N-channel MOSFET with a 60V rating and 13A continuous current. Equivalent products include the IRF3205, STP16NF06, AOD6D10, and BSS138. Always check specific datasheets for precise electrical characteristics and package compatibility before substituting.

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