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FQB30N06LTM

Name: FQB30N06LTM
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 32A D2PAK

Производитель
Мфр. Часть #FQB30N06LTM
Пакет D2PAK-3 , TO-263-2
Лист данных FQB30N06LTM DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	QFET®
ProductStatus	Last Time Buy
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	32A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	5V, 10V
RdsOn(Max)@IdVgs	35mOhm @ 16A, 10V
Vgs(th)(Max)@Id	2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	20 nC @ 5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1040 pF @ 25 V
PowerDissipation(Max)	3.75W (Ta), 79W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D²PAK (TO-263)

Обзор

Description

The FQB30N06LTM is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 30A. This MOSFET is characterized by low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation.
The FQB30N06LTM is suitable for various applications, including DC-DC converters, motor control, and other power switching functions. It is typically housed in a TO-220 package, allowing for efficient thermal dissipation.
With fast switching speeds and high reliability, the FQB30N06LTM is ideal for designs requiring robust performance in demanding environments. Users should refer to the datasheet for detailed specifications, thermal characteristics, and recommended operating conditions for optimal performance.

Features

The FQB30N06LTM is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Max drain-source voltage (VDS) of 60V.
2. Current Rating: Continuous drain current (ID) of 30A, allowing for substantial load handling.
3. Rds(on): Low on-resistance, typically around 0.045Ω, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, ensuring compatibility with low-voltage drive circuits.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching Speed: Suitable for high-frequency applications, contributing to improved performance in switching power supplies and converters.
7. Thermal Resistance: Low thermal resistance helps manage heat effectively in demanding applications.
Overall, the FQB30N06LTM is ideal for various applications, including power supplies, motor drives, and automotive systems.

Package

The FQB30N06LTM is typically packaged in a TO-220 package type. This package provides good thermal performance and ease of mounting, suitable for power applications.

Pinout

The FQB30N06LTM is an N-channel MOSFET with a total of three pins. Its pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This is the pin through which the main current flows when the MOSFET is in an 'on' state.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit, completing the circuit for the current flowing through the drain.
The FQB30N06LTM is designed for applications requiring high efficiency and fast switching, making it suitable for power management and switching applications in various electronic circuits.

Manufacturer

The FQB30N06LTM is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for producing a wide range of semiconductor products, including power MOSFETs, integrated circuits, and other electronic components. The company focused on providing solutions for various industries, including automotive, industrial, and consumer electronics.
As a semiconductor manufacturer, Fairchild specialized in developing technologies that enabled efficient energy management, signal processing, and high-performance applications. The acquisition by ON Semiconductor in 2016 expanded their portfolio and market presence, combining expertise in power management and integrated circuits. Overall, the company is recognized for its innovation and contributions to the electronics sector.

Application

The FQB30N06LTM is a N-channel MOSFET commonly used in power management applications. Its primary application areas include DC-DC converters, motor drives, power supplies, and switching regulators. It’s suitable for use in automotive, industrial, and consumer electronics due to its efficient switching capabilities and thermal performance.

Equivalent

Equivalent products to the FQB30N06LTM MOSFET include the IRFZ44N, STP30NF06, and AOD260N06. Always verify specific parameters like voltage, current, threshold, and RDS(on) to ensure compatibility in your application.

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