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FQB27P06TM

Name: FQB27P06TM
Rating: 4.7 (12 reviews)

POWER FIELD-EFFECT TRANSISTOR, 2

Производитель
Мфр. Часть #FQB27P06TM
Пакет TO-263-3
Лист данных FQB27P06TM DataSheet
В наличии3335

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Спецификации

Package	Bulk
Series	QFET®
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	27A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	70mOhm @ 13.5A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	43 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	1400 pF @ 25 V
PowerDissipation(Max)	3.75W (Ta), 120W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D2PAK (TO-263)

Обзор

Description

FQB27P06TM is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in electronic circuits for switching and amplification applications. This component is characterized by its ability to handle significant voltage and current levels, making it suitable for various power management tasks.
Key features generally include a low on-resistance (R_DS(on)), high-speed operation, and a maximum drain-source voltage (V_DS) typically around 60V. Its gate threshold voltage (V_GS(th)) allows for convenient control with standard logic levels, enabling efficient switching in digital circuits. The FQB27P06TM is commonly found in power supplies, motor drivers, and other applications requiring efficient power conversion.
When utilizing this MOSFET, it’s essential to consider thermal management and proper biasing to ensure reliable operation. Always refer to the specific datasheet for detailed electrical characteristics, thermal parameters, and recommended operating conditions.

Features

The FQB27P06TM is a N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 27A, providing flexibility for high-power circuits.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 0.045Ω, which helps reduce power losses and improve efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically low, allowing it to switch on easily with lower gate voltages.
5. Package: It is available in a TO-220 package, facilitating effective heat dissipation and easy mounting.
6. Applications: Commonly used in switch-mode power supplies, motor drivers, and other power management systems.
These features make the FQB27P06TM an excellent choice for efficient power switching and control in a variety of electronic applications.

Package

The FQB27P06TM is typically packaged in a TO-220 form factor, which is a type of metal can package used for power transistors and MOSFETs. This package design allows for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The FQB27P06TM is a P-channel MOSFET commonly used in power applications. It has a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the operation of the MOSFET; applying a negative voltage (relative to the source) turns the device on.
2. Source (S): This is the terminal through which the positive voltage is applied; it connects to the high side of the load.
3. Drain (D): This pin connects to the load, allowing current to flow when the MOSFET is turned on by the gate voltage.
The FQB27P06TM is designed for switching and amplification purposes, with a maximum drain-source voltage (V_DS) of -60V and a maximum continuous drain current (I_D) of -27A. Its structure allows for efficient performance in various applications, including power management and signal switching.

Manufacturer

The FQB27P06TM is a power MOSFET manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its production of a wide range of semiconductor devices, including transistors, diodes, and integrated circuits, primarily for applications in power management, automotive, and consumer electronics. The company was established in 1957 and played a significant role in the development of the semiconductor industry, known for innovations in analog and digital technologies. After its acquisition by ON Semiconductor in 2016, it continued to contribute to advancements in semiconductor technology under the ON brand, focusing on energy-efficient solutions and high-performance semiconductor products.

Application

The FQB27P06TM is a P-channel MOSFET commonly used in applications such as power management, battery switching, and load switching in electronic circuits. It is suitable for use in automotive, consumer electronics, and industrial applications, where efficient switching and low on-resistance are required. Its ability to handle high voltages makes it ideal for high-side switching applications.

Equivalent

The FQB27P06TM is a P-channel MOSFET. Equivalent products include:
1. IRF9540
2. SI7430DP
3. FQP27P06
4. STP27P06
5. MTP2P27V
Always verify specifications such as voltage, current, and package type to ensure compatibility for your specific application.

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