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FP50R06W2E3

Name: FP50R06W2E3
Rating: 4.7 (12 reviews)

IGBT Modules IGBT 600V 50A

Производитель
Мфр. Часть #FP50R06W2E3
Пакет
Лист данных FP50R06W2E3 DataSheet
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Спецификации

Packaging	Tray
Standard Pack Qty	15

Обзор

Description

The FP50R06W2E3 is an IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. It is designed for high-power applications, commonly used in industrial drives, renewable energy systems, and power conversion equipment. The "50" in its name indicates a maximum current rating of 50 amperes, while "06" signifies a maximum voltage rating of 600 volts.
This module features advanced thermal performance and efficient switching capabilities, making it suitable for applications requiring reliable and efficient power management. The FP50R06W2E3 typically comes in a compact, easy-to-mount package that facilitates heat dissipation, thus enhancing overall system reliability.
Key characteristics include low conduction losses, fast switching speeds, and robust performance under various conditions. Its design allows for compatibility with various control systems, making it a versatile choice for engineers and designers working on high-efficiency power electronic systems.

Features

The FP50R06W2E3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various industrial applications, including motor drives, renewable energy systems, and inverters. Key features include:
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: Up to 50A, capable of handling substantial load currents.
3. Low Switching Losses: Designed for efficiency, reducing energy losses during operation.
4. Thermal Performance: High thermal stability, allowing for reliable operation under varying temperatures.
5. Integrated Diodes: Features anti-parallel diodes for enhanced performance in inverter applications.
6. Compact Design: Optimized for space-saving installations in power electronic systems.
7. Easy to Mount: Features standard mounting options for ease of integration into existing systems.
Overall, the FP50R06W2E3 combines efficiency, reliability, and versatility, making it suitable for demanding applications in power electronics.

Package

The FP50R06W2E3 is a power MOSFET packaged in a TO-247 format. This package type features a robust design suitable for high-power applications, offering effective heat dissipation and ease of mounting.

Pinout

The FP50R06W2E3 is a power MOSFET from Infineon Technologies, specifically designed for high-efficiency applications. It features a total of 6 pins, with the following functions:
1. Gate (G) - controls the switching of the MOSFET.
2. Drain (D) - the terminal through which current flows out of the MOSFET.
3. Source (S) - the terminal through which current flows into the MOSFET.
The configuration typically follows the standard pinout for 3-phase or half-bridge applications, ensuring easy integration into power electronic systems. This device is known for its low on-resistance and high thermal performance, making it suitable for applications like inverters, converters, and motor drives.

Manufacturer

The FP50R06W2E3 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and microcontrollers. The company focuses on high-performance and energy-efficient products for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its innovation in power management and its commitment to sustainability, making it a key player in the semiconductor industry.

Application

The FP50R06W2E3 is an IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Key areas include renewable energy systems (such as solar inverters), motor drives, industrial equipment, and induction heating. Its high efficiency and thermal performance make it suitable for applications requiring high power handling, such as traction drives in electric vehicles and power converters in large electrical grids.

Equivalent

The FP50R06W2E3 is an IGBT (Insulated Gate Bipolar Transistor) module. Equivalent products include:
1. IRG4PC50W - International Rectifier
2. MG100J6ES1 - Mitsubishi
3. FGA50N120 - Fairchild Semiconductor
Ensure to check specific ratings and applications as they may vary slightly.

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УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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