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FM25V01A-G

Name: FM25V01A-G
Rating: 4.7 (12 reviews)

IC FRAM 128KBIT SPI 40MHZ 8SOIC

Производитель
Мфр. Часть #FM25V01A-G
Пакет 8-SOIC
Лист данных FM25V01A-G DataSheet
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Спецификации

Package	Tube
Series	F-RAM™
ProductStatus	Active
MemoryType	Non-Volatile
MemoryFormat	FRAM
Technology	FRAM (Ferroelectric RAM)
MemorySize	128Kb (16K x 8)
MemoryInterface	SPI
ClockFrequency	40 MHz
Voltage-Supply	2V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	8-SOIC (0.154, 3.90mm Width)

Обзор

Description

The FM25V01A-G is a high-performance, non-volatile memory device that uses ferroelectric technology to provide data storage. It features a 1 Mbit (128 K x 8) capacity and is designed for applications requiring low power consumption and fast access times. The device operates via a Serial Peripheral Interface (SPI), making it compatible with various microcontrollers and processors.
Key features include a wide operating voltage range, low write and read times, and the ability to endure a high number of write/erase cycles (typically over 10 million). The FM25V01A-G retains data without power, making it suitable for applications in automotive, industrial, and consumer electronics where data integrity is crucial.
Moreover, it offers a simple interface for ease of integration into existing systems, enabling designers to efficiently implement non-volatile storage solutions. Overall, the FM25V01A-G is ideal for use in scenarios where reliability and speed are essential.

Features

The FM25V01A-G is a 1-Mbit (128K x 8) Serial EEPROM from Fujitsu, featuring a high-speed SPI (Serial Peripheral Interface) for efficient data communication. Key features include:
1. Operating Voltage: 2.7V to 3.6V, allowing for low-power applications.
2. Data Retention: Typically up to 100 years, ensuring long-term data storage.
3. Write Endurance: Supports up to 1 million write cycles per memory cell.
4. Fast Access Time: Read access time is approximately 40 ns, enabling quick data retrieval.
5. Page Write Capability: Allows writing up to 256 bytes simultaneously, enhancing write efficiency.
6. Low Power Consumption: Suitable for battery-operated devices due to its reduced energy requirements.
7. 100% EEPROM Compatibility: Offers a simple drop-in replacement for conventional EEPROMs.
These features make the FM25V01A-G ideal for applications in consumer electronics, automotive systems, and industrial control, where reliable non-volatile memory is essential.

Package

The FM25V01A-G is available in an 8-pin SOIC package. It features a small form factor suitable for surface-mount applications, making it ideal for embedded systems where space is limited.

Pinout

The FM25V01A-G is a 1-Mbit (128K x 8) ferroelectric random access memory (FRAM) device. It features a total of 8 pins. The pinout and their functions are as follows:
1. VCC - Power supply (2.7V to 3.6V).
2. GND - Ground.
3. SCL - Serial clock input for I2C communication.
4. SDA - Serial data input/output for I2C communication.
5. HOLD - Hold pin to pause data transmission.
6. WP - Write protect pin to enable or disable write operations.
7. A0 - Address pin for selecting I2C slave address (used in multi-device configurations).
8. A1 - Address pin for selecting I2C slave address (used in multi-device configurations).
The FM25V01A-G operates using the I2C protocol, allowing it to communicate with microcontrollers and other devices efficiently while providing non-volatile data storage.

Manufacturer

The FM25V01A-G is manufactured by Fujitsu Semiconductor. Fujitsu Semiconductor is a subsidiary of Fujitsu Limited, a major Japanese multinational information technology equipment and services company. The subsidiary specializes in semiconductor products, including memory and microcontroller solutions for various applications such as consumer electronics, automotive systems, and industrial equipment. Fujitsu Semiconductor is known for its emphasis on advanced technology and innovation in the field of semiconductor manufacturing.

Application

The FM25V01A-G is a 1Mb (128KB) Ferroelectric Random Access Memory (FeRAM) device, commonly used in applications requiring non-volatile memory with fast read and write speeds. Key application areas include data logging, automotive electronics, industrial controls, smart meters, consumer electronics, and IoT devices. Its low power consumption and high endurance make it suitable for wear-leveling and frequent data updates in scenarios like configuration storage, firmware updates, and real-time data capture.

Equivalent

The FM25V01A-G is a 1Mb (128KB) serial FRAM memory chip. Equivalent products include the following:
1. Cypress CY15B108K - 1Mb serial FRAM
2. Rohm BM25V01 - 1Mb FRAM
3. STMicroelectronics M25P16 - Not FRAM but similar density and SPI interface (Flash)
4. Microchip MCP3XXX series - Alternative non-volatile memory solutions.
Ensure compatibility with interface, voltage, and timing specifications when selecting an equivalent.

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УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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