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FM24V02-G

Name: FM24V02-G
Rating: 4.7 (12 reviews)

IC FRAM 256KBIT I2C 3.4MHZ 8SOIC

Производитель
Мфр. Часть #FM24V02-G
Пакет SOP8
Лист данных FM24V02-G DataSheet
В наличии7910

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Спецификации

Package	Tube
Series	F-RAM™
ProductStatus	Obsolete
MemoryType	Non-Volatile
MemoryFormat	FRAM
Technology	FRAM (Ferroelectric RAM)
MemorySize	256Kb (32K x 8)
MemoryInterface	I²C
ClockFrequency	3.4 MHz
AccessTime	130 ns
Voltage-Supply	2V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	8-SOIC (0.154, 3.90mm Width)

Обзор

Description

The FM24V02-G is a non-volatile memory device that utilizes Ferroelectric RAM (FRAM) technology. It offers a 2-kilobit (256 x 8 bits) storage capacity, providing fast read and write operations with high endurance and low power consumption. Unlike traditional flash memory, FRAM retains data without the need for a battery and allows for unlimited write cycles, making it ideal for applications requiring frequent data updates.
Key features include a wide operating voltage range (typically 1.8V to 3.6V), a fast access time (around 45 ns), and an I2C interface for seamless integration with microcontrollers and other digital systems. The FM24V02-G is particularly suitable for applications in industrial automation, smart meters, consumer electronics, and data logging, where reliability and performance are critical.
Overall, the FM24V02-G is an efficient and robust solution for non-volatile memory needs, combining the benefits of speed, endurance, and low power consumption.

Features

The FM24V02-G is a 2-Kbit (256 x 8) non-volatile memory device from Fudan Microelectronics. Key features include:
1. Memory Type: Ferroelectric Random Access Memory (FeRAM), offering fast read and write cycles.
2. Interface: I2C compatible serial interface for easy integration.
3. Operating Voltage: Typically operates at 2.0V to 3.6V, making it suitable for low-power applications.
4. Write Endurance: Supports a high write endurance of up to 10 trillion write/erase cycles.
5. Data Retention: Retains data for over 10 years at 85°C, ensuring long-term reliability.
6. Speed: Fast access times (typically 100 ns for read and 10 µs for write).
7. Package Options: Available in various packages, including SOP-8 and TSSOP-8, for flexible design implementation.
These features make the FM24V02-G ideal for applications requiring high-speed, high-endurance, and non-volatile memory solutions, such as in industrial controllers, medical devices, and consumer electronics.

Package

The FM24V02-G is typically available in an 8-pin SOIC (Small Outline Integrated Circuit) package, which is a surface-mount package suitable for compact electronic designs.

Pinout

The FM24V02-G is a 2-kilobit (256 x 8) non-volatile ferroelectric RAM (FeRAM) device. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. VCC: Power supply.
2. GND: Ground.
3. SDA: Serial data line for communication.
4. SCL: Serial clock line for clock signal.
5. HOLD: Hold pin to pause communication.
6. WP: Write protect pin to protect data from being modified.
7. A0: Address pin for device configuration.
8. A1: Address pin for device configuration.
The FM24V02-G operates via an I2C interface, allowing for easy integration into microcontroller-based systems with low power consumption and fast read/write cycles.

Manufacturer

The FM24V02-G is manufactured by Fujitsu Semiconductor. Fujitsu Semiconductor is a division of Fujitsu Limited, a multinational information technology equipment and services company based in Japan. The company specializes in semiconductors, microcontrollers, and other electronic components. They provide a wide range of products and solutions for various industries, including automotive, telecommunications, and consumer electronics. Fujitsu's expertise in technology and innovation positions it as a key player in the semiconductor market, focusing on delivering high-quality, reliable products that meet the needs of modern electronic applications.

Application

The FM24V02-G is a 2-kbit ferroelectric random access memory (FRAM) device primarily used in applications requiring non-volatile data storage with high endurance and speed. Common application areas include smart meters, industrial automation, medical devices, automotive electronics, and consumer electronics. Its low power consumption and fast write cycles make it suitable for IoT devices and real-time data logging applications.

Equivalent

The FM24V02-G chip is a 2Kbit Ferroelectric RAM (FRAM) memory device. Equivalent products include the MB85RC2MT, M24C02, and EFM32ZG FRAM series. These alternatives offer similar memory capacity and functionalities but may vary in interface type (I2C vs. SPI) and specific features. Always check datasheets for exact specifications and compatibility.

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