Изображения являются только для ссылки

FDP33N25

Name: FDP33N25
Rating: 4.7 (12 reviews)

MOSFET N-CH 250V 33A TO220-3

Производитель
Мфр. Часть #FDP33N25
Пакет TO-220-3
Лист данных FDP33N25 DataSheet
В наличии7878

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tube
Series	UniFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	250 V
Current-ContinuousDrain(Id)@25°C	33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	94mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	48 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	2135 pF @ 25 V
PowerDissipation(Max)	235W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220-3

Обзор

Description

FDP33N25 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a rated voltage of 250V and a continuous drain current of 33A, making it suitable for various power management tasks, including switching power supplies, motor control, and DC-DC converters. The device is known for its low on-resistance (R_DS(on)), which minimizes conduction losses and improves energy efficiency.
Its fast switching capabilities also allow for higher frequency operation, which is advantageous in modern electronic designs. The FDP33N25 typically comes in a TO-220 package, facilitating effective heat dissipation. This makes it ideal for applications where thermal management is crucial. Overall, the FDP33N25 is a reliable choice for engineers looking to optimize performance in their power electronics projects.

Features

The FDP33N25 is a power MOSFET designed for high-performance applications. Key features include:
1. Type: N-channel, enhancing efficiency in switching applications.
2. Voltage Rating: Rated for 25V, suitable for low-voltage applications.
3. Continuous Drain Current: Capable of handling up to 33A, making it ideal for power management.
4. RDS(on): Low on-resistance (typically around 0.035 ohms), which minimizes power loss and heat generation during operation.
5. Gate Threshold Voltage: Typically between 1V to 2.5V, allowing for easy drive with low-voltage control signals.
6. Package: Available in TO-220 and DPAK packages, facilitating heat dissipation and ease of installation.
7. Fast Switching Speed: Suitable for high-frequency applications, improving efficiency in power conversion.
8. Thermal Resistance: Good thermal performance, ensuring reliability in demanding conditions.
These features make the FDP33N25 a popular choice for power supplies, motor drivers, and DC-DC converters.

Package

The FDP33N25 is typically housed in a TO-220 package type, which is commonly used for power transistors. This package design allows for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The FDP33N25 is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current exits the MOSFET. It is connected to the load.
3. Source (S): This terminal is where current enters the MOSFET from the power supply or circuit ground.
4. Body (B): This pin is internally connected to the source and is typically not externally used in standard applications.
5. Tab/Heat Sink: The tab can also be considered as a pin for thermal management, as it helps dissipate heat generated during operation.
The FDP33N25 has a maximum continuous drain current of 33A and a maximum drain-source voltage of 25V, making it suitable for various power applications.

Manufacturer

The FDP33N25 is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for producing a wide range of semiconductor products, including power MOSFETs, diodes, and integrated circuits. The company specialized in analog, power, and mixed-signal semiconductor solutions, serving various industries such as automotive, consumer electronics, and industrial applications. ON Semiconductor, the parent company, continues to provide innovative semiconductor technologies and focuses on energy-efficient solutions.

Application

The FDP33N25 is an N-channel MOSFET commonly used in applications such as power supplies, motor control, and DC-DC converters. Its low RDS(on) rating makes it suitable for high-efficiency switching applications. It is also utilized in automotive systems, lighting control, and inverter circuits.

Equivalent

The FDP33N25 is a power MOSFET with a 25V rating and a continuous drain current of 33A. Equivalent products include:
1. IRF3205
2. STP33NF25
3. FQP33N25
4. BSS139
Always verify specifications and characteristics such as R_DS(on), package type, and safe operating area to ensure compatibility with your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.