FDN359AN

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FDN359AN

MOSFET N-CH 30V 2.7A SUPERSOT3

  • Производитель
  • Мфр. Часть #FDN359AN
  • Пакет SOT23-3
  • Лист данных
  • В наличии3680

100% оригинальный & Новые

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Гарантия 365 дней

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Спецификации

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 2.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 46mOhm @ 2.7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 7 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 480 pF @ 10 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Обзор

Description

FDN359AN is a course that focuses on the fundamentals of food and nutrition, exploring the role of diet in health and disease. It typically covers topics such as macronutrients, micronutrients, dietary guidelines, and the impact of food choices on overall well-being. The course may also delve into food science principles, nutritional requirements across different life stages, and the relationship between nutrition and chronic diseases.
Students engage in critical analysis of current dietary practices, learn to assess nutritional needs, and develop skills for effective communication about nutrition. Practical components might include case studies, dietary assessments, and applications of nutritional science in real-world contexts.
The objective is to equip students with a comprehensive understanding of nutrition's role in promoting health and preventing disease, preparing them for careers in health, education, or research fields related to food and nutrition.

Features

The FDN359AN is a N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: Typically has a drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Can handle continuous drain currents (I_D) up to approximately 30A, allowing it to manage significant loads.
3. Low On-Resistance: Features a low R_DS(on), which minimizes power loss and heat generation during operation, enhancing efficiency.
4. Fast Switching Speed: Ideal for high-frequency applications due to its fast turn-on and turn-off characteristics.
5. Thermal Performance: Designed with a robust thermal management capability, often with a TO-220 package for better heat dissipation.
6. Gate Threshold Voltage: Operates with a low gate voltage, typically around 2-4V, allowing easy interfacing with microcontrollers.
7. Applications: Commonly used in power supplies, motor controls, and various electronic devices.
These characteristics make the FDN359AN a versatile choice for engineers in power management solutions.

Package

The FDN359AN is typically available in a SOT-23 package type. This small, surface-mount package is commonly used for transistors and integrated circuits, providing efficient thermal performance and space-saving advantages.

Pinout

The FDN359AN is a N-channel MOSFET commonly used in low-voltage applications. It typically comes in a SOT-23 package, which has a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here turns the device on or off.

2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): The source pin is where the current enters the MOSFET. In N-channel MOSFETs, this pin is generally connected to ground or a lower potential compared to the drain.
This configuration allows the FDN359AN to act as a switch or amplifier in various electronic applications. Always refer to the specific datasheet for detailed specifications and characteristics.

Manufacturer

The FDN359AN is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power management, analog, and mixed-signal devices. The company serves various industries, including automotive, industrial, telecommunications, consumer electronics, and medical sectors. ON Semiconductor focuses on energy-efficient products and technologies aimed at enabling a sustainable future. With a strong emphasis on innovation and quality, the company has established itself as a key player in the semiconductor market.

Application

FDN359AN is commonly used in applications such as low-side switching, signal amplification, and as a switch in power management circuits. Its characteristics make it suitable for driving motors, relays, and LED lighting. Additionally, it can be utilized in audio amplification and as a load switch in battery-powered devices due to its low on-resistance and efficient performance.

Equivalent

The FDN359AN is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. However, specific applications may require checking parameters like voltage, current ratings, and package type to ensure compatibility. Always consult the datasheet for detailed specifications.

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