Изображения являются только для ссылки

FDMS4D0N12C

Name: FDMS4D0N12C
Rating: 4.7 (12 reviews)

MOSFET N-CH 120V 18.5A/114A 8QFN

Производитель
Мфр. Часть #FDMS4D0N12C
Пакет PQFN-8
Лист данных
В наличии7762

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	PowerTrench®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	120 V
Current-ContinuousDrain(Id)@25°C	18.5A (Ta), 114A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	6V, 10V
RdsOn(Max)@IdVgs	4mOhm @ 67A, 10V
Vgs(th)(Max)@Id	4V @ 370A
GateCharge(Qg)(Max)@Vgs	82 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	6460 pF @ 60 V
PowerDissipation(Max)	2.7W (Ta), 106W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-PQFN (5x6)

Обзор

Description

FDMS4D0N12C is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications for switching and amplification. This specific model features a low on-resistance, enabling efficient power management and reducing heat generation during operation. It is designed for high-speed switching, making it suitable for use in power supplies, motor control, and other applications where rapid response is crucial.
The device typically has a maximum drain-source voltage rating, a specified continuous drain current, and a gate threshold voltage, which determines when the MOSFET turns on. Its construction allows for high reliability and performance in demanding environments.
In summary, FDMS4D0N12C is an essential component in modern electronics, providing efficient power management solutions across various industries.

Features

The FDMS4D0N12C is a powerful N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It supports a drain-source voltage (VDS) of 120V, making it suitable for a variety of high-voltage applications.
2. Continuous Drain Current: Capable of handling continuous drain currents up to 40A, allowing for efficient power management.
3. Low On-Resistance: Features a low RDS(on) value, which minimizes power losses and improves efficiency.
4. Fast Switching Speed: Designed for high-speed operation, making it ideal for switching applications.
5. Thermal Performance: Equipped with a robust thermal resistance, ensuring effective heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and integration into circuits.
Overall, the FDMS4D0N12C is suitable for power supply, motor control, and other demanding electronic applications.

Package

The FDMS4D0N12C is available in a TO-220 package type. This package design is commonly used for power MOSFETs due to its efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The FDMS4D0N12C is a dual N-channel MOSFET commonly used in power applications. It typically comes in a DPAK package with a pin count of 5.
### Pin Configuration:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET, often shared with the source of the first.
### Function:
The FDMS4D0N12C is used for switching applications due to its low on-resistance and high efficiency. It is suitable for use in DC-DC converters, motor control, and other power management circuits. The dual configuration allows for compact designs while providing flexibility in circuit layouts.

Manufacturer

The FDMS4D0N12C is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of electronic components, including power management solutions, analog devices, and sensors. The company serves various industries, such as automotive, industrial, telecommunications, and consumer electronics. They focus on providing high-performance and energy-efficient products to meet the demands of modern electronic applications.

Application

FDMS4D0N12C is a dual N-channel MOSFET used in various applications, including power management, voltage regulation, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for use in automotive systems, industrial automation, and consumer electronics. Additionally, it can be employed in power supply circuits, motor control, and battery management systems.

Equivalent

The FDMS4D0N12C is a power MOSFET from Fairchild Semiconductor. Equivalent products include the ON Semiconductor NTPF4N12L, Vishay SiHF017N12, and the Infineon BSC012N12LS. Always verify specifications like Vds, Id, Rds(on), and package type for compatibility in your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.