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FDD13AN06A0

Name: FDD13AN06A0
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 9.9A/50A DPAK

Производитель
Мфр. Часть #FDD13AN06A0
Пакет
Лист данных FDD13AN06A0 DataSheet
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Спецификации

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
Series	PowerTrench®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	9.9A (Ta), 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	6V, 10V
RdsOn(Max)@IdVgs	13.5mOhm @ 50A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	29 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1350 pF @ 25 V
PowerDissipation(Max)	115W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	TO-252AA

Обзор

Description

The FDD13AN06A0 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. With a maximum drain-source voltage of 60V and a continuous drain current rating of 13A, it is suitable for various power management tasks, including DC-DC converters, motor drives, and power supply circuits.
Key features include low RDS(on) (on-state resistance), which minimizes power loss during operation, and fast switching speeds, enhancing overall system efficiency. The MOSFET is typically housed in a TO-220 package, facilitating heat dissipation and easy integration into electronic designs. Its high reliability and robust performance make it a popular choice in both consumer and industrial applications.
When using the FDD13AN06A0, it's crucial to consider thermal management and appropriate gate drive voltages to achieve optimal performance. Overall, it is a versatile component widely utilized in modern electronic designs for efficient power control.

Features

The FDD13AN06A0 is a N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 13A.
3. R_DS(on): Low on-resistance, approximately 0.018 ohms, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): Usually ranges from 1V to 2.5V, making it suitable for low-voltage applications.
5. Fast Switching: Designed for high-speed switching capabilities, enhancing efficiency in power management.
6. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy integration into circuits.
7. Applications: Ideal for use in power supplies, motor drivers, and other power management systems.
These attributes make the FDD13AN06A0 a reliable choice for electronic designs requiring efficient power handling and minimal thermal constraints.

Package

The FDD13AN06A0 is typically packaged in a DPAK (TO-252) or similar surface-mount package type. This package is designed for easy mounting on PCBs and provides good thermal performance.

Pinout

The FDD13AN06A0 is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate terminal allows current to flow between the drain and source.

2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in the circuit.
3. Source (S): The source pin is the terminal through which current enters the MOSFET. It is typically connected to ground or a lower voltage potential in the circuit.
The FDD13AN06A0 is designed for applications such as power management and switching, and it features low on-resistance and fast switching speeds, making it suitable for various electronic devices.

Manufacturer

The FDD13AN06A0 is a MOSFET manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including discrete devices, analog ICs, and power management solutions. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on providing energy-efficient solutions and enhancing the performance of electronic systems.

Application

The FDD13AN06A0 is a N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, and motor control. Its high efficiency and fast switching capabilities make it suitable for use in consumer electronics, renewable energy systems, and automotive applications. Additionally, it can be utilized in load switching and power amplification circuits.

Equivalent

The FDD13AN06A0 is a N-channel MOSFET primarily used in power applications. Equivalent products include the IRF3205, STP16NF06, and FDD15AN06A. Always verify specifications like V_ds, I_d, and R_DS(on) to ensure compatibility in your specific application.

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