FDC645N

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FDC645N

MOSFET N-CH 30V 5.5A SUPERSOT6

  • Производитель
  • Мфр. Часть #FDC645N
  • Пакет SSOT-6
  • Лист данных FDC645N DataSheet
  • В наличии7090

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Спецификации

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 5.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 26mOhm @ 6.2A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 4.5 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 1460 pF @ 15 V
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT™-6

Обзор

Description

FDC645N is a digital signal processor (DSP) used primarily in audio applications, designed to enhance sound quality and manage various audio processing tasks. It is part of a broader family of DSPs that focus on efficiency and high-performance audio processing. Key features include low power consumption, real-time processing capabilities, and support for various audio algorithms, making it suitable for devices such as smartphones, home theater systems, and professional audio equipment.
The architecture of the FDC645N allows for effective handling of multiple audio channels, enabling advanced features like noise cancellation, equalization, and spatial audio effects. Its programmability and flexibility make it a popular choice among audio engineers looking to implement custom audio solutions. Overall, the FDC645N is a vital component in modern audio technology, contributing to enhanced listening experiences across a range of applications.

Features

The FDC645N is a high-performance N-channel MOSFET known for its efficiency and versatility in various electronic applications. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 60V, enabling it to handle various power levels.
2. Current Rating: Supports continuous drain current (I_D) of up to 60A, making it suitable for high-load applications.
3. Low On-Resistance: Features a low R_DS(on), which minimizes conduction losses and improves thermal performance.
4. Fast Switching Speed: Designed for rapid switching applications, enhancing performance in power management and converter circuits.
5. Thermal Stability: Excellent thermal characteristics with a high maximum junction temperature, allowing for reliable operation in demanding environments.
6. Package Type: Available in TO-220 and other packages, facilitating easy integration into circuits.
These features make the FDC645N ideal for applications like power supplies, motor control, and other high-efficiency power management solutions.

Package

The FDC645N is typically available in a surface mount package type, specifically the SOIC (Small Outline Integrated Circuit) package. This allows for efficient integration into electronic circuits with a low profile.

Pinout

The FDC645N is a dual N-channel MOSFET with a pin count of 8. Its primary function is to act as a power switch in various electronic applications, such as power management and signal processing.
Pin Configuration:
1. Gate 1 - Gate for the first N-channel MOSFET.
2. Drain 1 - Drain for the first N-channel MOSFET.
3. Source 1 - Source for the first N-channel MOSFET.
4. Source 2 - Source for the second N-channel MOSFET.
5. Drain 2 - Drain for the second N-channel MOSFET.
6. Gate 2 - Gate for the second N-channel MOSFET.
7. Drain 3 - (Not typically used; check specific application).
8. Gate 3 - (Not typically used; check specific application).
The FDC645N features low on-resistance and high-speed switching capabilities, making it suitable for applications requiring efficient power conversion and management.

Manufacturer

The FDC645N is manufactured by Fujifilm Dimatix, Inc., a subsidiary of Fujifilm Corporation. Fujifilm Dimatix specializes in developing advanced inkjet printheads and related technologies, primarily for industrial and commercial printing applications. The company focuses on high-performance printing solutions that serve various sectors, including graphics, textiles, and electronics. Fujifilm itself is a multinational corporation known for its wide range of products and services, encompassing imaging, medical systems, document solutions, and more.

Application

The FDC645N is primarily used in power management applications, particularly as a high-speed, low-side MOSFET driver in DC-DC converters, motor control, and automotive systems. Its features enable efficient switching and control in power supplies, battery management systems, and renewable energy systems. Additionally, it is suitable for applications requiring high efficiency and compact designs, such as consumer electronics and industrial automation.

Equivalent

The FDC645N is a dual N-channel MOSFET. Equivalent products include the IRF3205, BSS138, and the AO3400. Always verify specifications like RDS(on), VDS, and package type to ensure compatibility before substitution.

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