DN2540N8-G

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DN2540N8-G

MOSFET N-CH 400V 170MA TO243AA

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Спецификации

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V
Current-ContinuousDrain(Id)@25°C 170mA (Tj)
DriveVoltage(MaxRdsOnMinRdsOn) 0V
RdsOn(Max)@IdVgs 25Ohm @ 120mA, 0V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 300 pF @ 25 V
FETFeature Depletion Mode
PowerDissipation(Max) 1.6W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-243AA (SOT-89)

Обзор

Description

The DN2540N8-G is a high-voltage N-channel MOSFET designed for power applications. It features a low on-resistance, allowing for efficient switching and reduced power losses. With a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of around 8A, it is suitable for various applications including power management, motor control, and DC-DC converters.
The device is housed in a compact package, which aids in thermal management and reduces PCB space. Its fast switching speed makes it ideal for high-frequency applications. The DN2540N8-G also boasts a high input impedance, making it compatible with low-power control signals.
Overall, it is a reliable choice for engineers looking to implement efficient power solutions in their designs. Always refer to the manufacturer's datasheet for detailed specifications and operating conditions.

Features

The DN2540N8-G is a high-performance N-channel MOSFET designed for various applications. Key features include:
1. Voltage Rating: Offers a maximum drain-source voltage (V_DS) of 40V, making it suitable for medium voltage applications.
2. Current Rating: Capable of handling continuous current up to 20A, allowing for efficient power management.
3. Low R_DS(on): Provides a low on-resistance (R_DS(on)) of around 0.025 ohms, which minimizes power loss and enhances efficiency.
4. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications such as switching power supplies and DC-DC converters.
5. Thermal Performance: Supports good thermal performance due to its TO-220 package, facilitating effective heat dissipation.
6. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) typically between 2V to 4V, making it compatible with low-voltage control logic.
These characteristics make the DN2540N8-G ideal for use in power management, motor control, and other electronic circuits requiring efficient switching capabilities.

Package

The DN2540N8-G is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power transistors and other high-power applications.

Pinout

The DN2540N8-G is a low-threshold N-channel MOSFET with a pin count of 8. Its primary functions include acting as a switch or amplifier in various electronic applications.
Pin Configuration:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output where current flows out.
3. Source (S) - The input where current enters.
4-8. Additional Pins - Typically used for thermal and electrical connection purposes, which may include a heat sink or other functional connections depending on the package type.
The DN2540N8-G is commonly used in power management, signal processing, and other applications requiring efficient switching and amplification. Its low on-resistance and high-speed switching capabilities make it suitable for various electronic designs.

Manufacturer

The DN2540N8-G is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive components, providing a wide range of electronic components including resistors, capacitors, inductors, diodes, and transistors. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, USA, and serves various industries such as automotive, industrial, telecommunications, consumer electronics, and military/aerospace. Vishay is known for its commitment to innovation, quality, and reliability in the electronic components market. The DN2540N8-G is specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications.

Application

The DN2540N8-G is a depletion-mode MOSFET primarily used in analog applications such as linear regulation, precision current sources, and voltage-controlled resistors. It is suitable for low-voltage and low-power applications, including signal amplification and switching. Additionally, it can be utilized in instruments, biasing circuits, and various audio applications due to its low noise characteristics.

Equivalent

The DN2540N8-G chip is a depletion-mode MOSFET. Equivalent products include:
1. LND150 – A similar depletion-mode NMOS transistor.
2. BS250 – A small-signal N-channel MOSFET, although it has different specifications.
3. MPSU01 – A general-purpose depletion-mode transistor.
4. 2N7000 – An enhancement-mode MOSFET, not a direct equivalent but often used in similar applications.
Always check the specific electrical characteristics to ensure compatibility for your application.

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