Изображения являются только для ссылки

DMN61D9UDW-7

Name: DMN61D9UDW-7
Rating: 4.7 (12 reviews)

MOSFET 2N-CH 60V 0.35A

Производитель
Мфр. Часть #DMN61D9UDW-7
Пакет TSSOP-6
Лист данных
В наличии5422

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Obsolete
FETType	2 N-Channel (Dual)
FETFeature	Standard
DraintoSourceVoltage(Vdss)	60V
Current-ContinuousDrain(Id)@25°C	350mA
RdsOn(Max)@IdVgs	2Ohm @ 50mA, 5V
Vgs(th)(Max)@Id	1V @ 250µA
GateCharge(Qg)(Max)@Vgs	0.4nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds	28.5pF @ 30V
Power-Max	320mW
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	6-TSSOP, SC-88, SOT-363

Обзор

Description

DMN61D9UDW-7 is a specific model of a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It features low on-resistance, making it ideal for applications in power management, motor control, and switching circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 9A, and a low gate threshold voltage, which allows for efficient operation in low-voltage applications. The device is packaged in a compact SO-8 format, facilitating space-saving designs in electronic circuits.
DMN61D9UDW-7 is commonly used in automotive, industrial, and consumer electronics due to its reliability and performance. Its high efficiency reduces power loss, contributing to better thermal management in devices. Overall, it serves as a critical component in various electronic designs requiring efficient switching capabilities.

Features

The DMN61D9UDW-7 is a versatile and efficient DMOS power MOSFET designed for various applications. Key features include:
1. Voltage Rating: It typically has a high breakdown voltage, making it suitable for high-voltage applications.
2. Low On-Resistance: This characteristic reduces power losses and enhances overall efficiency in circuits.
3. High-Speed Switching: Capable of rapid switching, it is ideal for applications requiring quick response times.
4. Thermal Performance: Designed to handle significant heat dissipation, which is crucial for reliability in demanding environments.
5. Package Type: Often available in compact packages, facilitating space-efficient designs.
6. Gate Threshold Voltage: Optimized for compatibility with various gate drive voltages, providing design flexibility.
These features make the DMN61D9UDW-7 suitable for applications in power management, automotive systems, and electronic devices requiring efficient power handling.

Package

The DMN61D9UDW-7 is packaged in a surface mount device (SMD) format, specifically in a SO-8 package. This allows for efficient mounting on printed circuit boards, facilitating space-saving designs in electronic applications.

Pinout

The DMN61D9UDW-7 is a N-channel MOSFET in a surface mount package. It typically features a pin count of 8 pins. The primary functions of this device include acting as a switch for electronic circuits, enabling efficient control of power and signal applications. It is designed for low voltage and low on-resistance operation, making it suitable for applications such as power management, load switching, and signal routing. The MOSFET operates with a maximum drain-source voltage of 60V and a continuous drain current rating of 30A. Its compact size and performance characteristics make it ideal for use in consumer electronics, automotive applications, and power supply circuits.

Manufacturer

The DMN61D9UDW-7 is manufactured by Diodes Incorporated, a global supplier of high-quality semiconductor products. Diodes Incorporated specializes in developing and manufacturing a wide range of discrete, analog, and mixed-signal semiconductors, which are used in various applications, including consumer electronics, automotive systems, and industrial equipment. The company is known for its focus on providing innovative solutions and reliable performance in the semiconductor industry.

Application

The DMN61D9UDW-7 is a dual N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor control, and load switching. It is suitable for low-voltage applications, offering efficient switching and thermal performance. Its compact package allows for integration in space-constrained designs, making it ideal for consumer electronics, automotive, and industrial automation applications.

Equivalent

The DMN61D9UDW-7 is a dual N-channel MOSFET. Equivalent products include the BSS138, BSS84, and DMN61D9UDW, depending on specific requirements like voltage rating and package type. Always check the datasheets for precise specifications to ensure compatibility in your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.