CSD17559Q5

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CSD17559Q5

MOSFET N-CH 30V 40A/100A 8VSON

  • Производитель
  • Мфр. Часть #CSD17559Q5
  • Пакет
  • Лист данных CSD17559Q5 DataSheet
  • В наличии22363

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Спецификации

Supplier Texas Instruments
Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 40A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.15mOhm @ 40A, 10V
Vgs(th)(Max)@Id 1.7V @ 250µA
GateCharge(Qg)(Max)@Vgs 51 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9200 pF @ 15 V
PowerDissipation(Max) 3.2W (Ta), 96W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON-CLIP (5x6)

Обзор

Description

CSD17559Q5 refers to a specific product code for a semiconductor device, likely a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications, including power management and switching. This device typically features high efficiency, low on-resistance, and fast switching capabilities, making it suitable for use in power supplies, motor drivers, and other high-performance circuits.
The introduction of such devices usually covers their electrical characteristics, thermal performance, and applications. Key specifications might include voltage ratings, current handling, and package types. Additionally, datasheets provide essential information on the device's operation, pin configurations, and recommended usage guidelines. Understanding these parameters is crucial for engineers and designers when integrating the component into their projects to ensure optimal performance and reliability.

Features

The CSD17559Q5 is a power MOSFET designed for efficient switching applications, especially in power management systems. Key features include:
1. Voltage Rating: It has a maximum V_DS (drain-source voltage) of 50V, making it suitable for various applications.
2. R_DS(on): The device offers a low on-resistance (R_DS(on)) of approximately 5.9 mΩ, ensuring efficient current conduction and reduced power losses.
3. Current Handling: It can handle continuous drain currents up to 60A, accommodating high-power demands.
4. Package: Packaged in a compact 5x6 mm QFN (Quad Flat No-lead) format, it provides excellent thermal performance and saves PCB space.
5. Thermal Resistance: The low thermal resistance enhances reliability and efficiency in thermal management.
6. Fast Switching: The MOSFET features fast switching capabilities, making it ideal for synchronous rectification in DC-DC converters and other high-frequency applications.
These features make the CSD17559Q5 an excellent choice for applications in power supplies, motor drives, and other power management designs.

Package

The CSD17559Q5 is offered in a QFN (Quad Flat No-lead) package type, specifically designed for high-performance applications. This compact packaging enhances thermal performance and minimizes parasitic inductance, making it suitable for power management in various applications.

Pinout

The CSD17559Q5 is a N-channel MOSFET with a pin count of 5. Its primary functions include serving as a switch for high-speed applications, particularly in power management systems, DC-DC converters, and motor control circuits. The device is designed for high efficiency with low on-resistance and fast switching speeds.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation by applying a voltage to turn it on or off.
2. Drain (D) - Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S) - Connects to ground or the negative side of the load; it’s where current exits the MOSFET.
The additional pins may be used for features like a thermal pad for improved heat dissipation. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.

Manufacturer

The manufacturer of the CSD17559Q5 is Texas Instruments (TI). Texas Instruments is a global semiconductor design and manufacturing company known for its development of analog and embedded processing chips. Founded in 1930, the company is headquartered in Dallas, Texas. TI primarily serves a wide range of industries, including automotive, industrial, communications, and consumer electronics. The CSD17559Q5 is a power MOSFET designed for efficient power management, commonly used in applications like power supplies and motor control. TI is recognized for its innovation and commitment to advancing technology in various sectors.

Application

The CSD17559Q5 is a high-performance MOSFET commonly used in applications such as power management, DC-DC converters, synchronous rectification, and motor drives. Its low RDS(on) and fast switching characteristics make it suitable for high-efficiency power supply designs, including renewable energy systems and electric vehicles. Additionally, it can be utilized in battery management systems and industrial automation for optimal switching performance.

Equivalent

The CSD17559Q5 is a N-channel MOSFET commonly used in power management applications. Equivalent products include the CSD17580Q5, CSD17570Q5, and IRF3205. Be sure to verify specifications such as voltage, current ratings, and on-resistance to ensure compatibility for your specific application. Always consult datasheets for precise comparisons.

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