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CSD16411Q3

Name: CSD16411Q3
Rating: 4.7 (12 reviews)

MOSFET N-CH 25V 14A/56A 8VSON

Производитель
Мфр. Часть #CSD16411Q3
Пакет 8-PowerTDFN
Лист данных
В наличии2645

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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
Series	NexFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	25 V
Current-ContinuousDrain(Id)@25°C	14A (Ta), 56A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	10mOhm @ 10A, 10V
Vgs(th)(Max)@Id	2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs	3.8 nC @ 4.5 V
Vgs(Max)	+16V, -12V
InputCapacitance(Ciss)(Max)@Vds	570 pF @ 12.5 V
PowerDissipation(Max)	2.7W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-VSONP (3x3.15)

Обзор

Description

CSD16411Q3 refers to a specific course or module, likely within a curriculum related to Computer Science or a related field. Typically, such courses cover fundamental concepts in programming, data structures, algorithms, and possibly software development methodologies.
The introduction to CSD16411Q3 would include an overview of the course objectives, key topics to be covered, assessment methods, and prerequisites for enrollment. Students can expect to engage in hands-on programming exercises, collaborative projects, and theoretical discussions aimed at enhancing their coding skills and understanding of computational theory.
Overall, the course is designed to equip students with the necessary skills to tackle more advanced topics in computer science and prepare them for real-world applications in technology and software development.

Features

The CSD16411Q3 is a high-performance power MOSFET designed for low-voltage applications, featuring advanced technology for efficiency and reliability. Key features include:
1. RDS(on): Low on-resistance (typically around 2.1 mΩ), allowing for reduced conduction losses.
2. Voltage Rating: Rated for 60V, suitable for various power management applications.
3. Current Rating: Capable of handling high continuous current, supporting demanding applications.
4. Package: Offered in a compact, thermally efficient DPAK package, facilitating easy integration into designs.
5. Thermal Performance: Enhanced thermal management properties to ensure stable operation under high-load conditions.
6. Fast Switching: Optimized for fast switching speeds, improving efficiency in DC-DC converters and power supplies.
7. Gate Threshold Voltage: Designed for compatibility with low-voltage control signals.
These features make the CSD16411Q3 an ideal choice for applications in power supplies, motor control, and other power management systems.

Package

The CSD16411Q3 is packaged in a 3x3 mm PowerPAD™ QFN (Quad Flat No-lead) package. This type of packaging is designed for high-performance applications, providing efficient thermal management and reduced footprint on PCBs.

Manufacturer

The CSD16411Q3 is manufactured by Texas Instruments (TI), a globally recognized technology company. Texas Instruments specializes in designing and manufacturing semiconductors and various integrated circuits. Founded in 1930 and based in Dallas, Texas, TI is known for its innovations in analog and embedded processing products, which are essential in a wide range of applications, including consumer electronics, automotive systems, industrial equipment, and communication devices. The company is a key player in the semiconductor industry and is committed to advancing technology solutions for a diverse set of markets.

Application

The CSD16411Q3 is a high-performance power MOSFET primarily used in various applications such as DC-DC converters, power management systems, motor drives, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supply designs, including servers, telecom equipment, and renewable energy systems.

Equivalent

The CSD16411Q3 is a power MOSFET typically used in DC-DC converters and other power applications. Equivalent products include the CSD16410Q3, CSD16400Q3, and other similar N-channel MOSFETs from manufacturers like Infineon, ON Semiconductor, and Vishay. Always verify specifications like Vds, Id, Rds(on), and package type for compatibility.

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УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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