CSD16409Q3

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CSD16409Q3

MOSFET N-CH 25V 15A/60A 8VSON

  • Производитель
  • Мфр. Часть #CSD16409Q3
  • Пакет PowerTDFN-8
  • Лист данных
  • В наличии3544

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Спецификации

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 25 V
Current-ContinuousDrain(Id)@25°C 15A (Ta), 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 8.2mOhm @ 17A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.6 nC @ 4.5 V
Vgs(Max) +16V, -12V
InputCapacitance(Ciss)(Max)@Vds 800 pF @ 12.5 V
PowerDissipation(Max) 2.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (5x6)

Обзор

Description

CSD16409Q3 likely refers to a specific course code, possibly related to computer science or software development. It may cover fundamental concepts in programming, software design, or project management. Typically, such courses aim to equip students with practical skills and theoretical knowledge relevant to the field.
Students can expect to learn various programming languages, software development methodologies, and tools essential for creating efficient and effective software solutions. The course may include hands-on projects, collaborative work, and assessments to reinforce learning outcomes.
To gain a better understanding of CSD16409Q3, it's advisable to consult the course syllabus or relevant academic resources that outline the topics, objectives, and prerequisites associated with the course.

Features

The CSD16409Q3 is a high-performance power MOSFET designed for various applications, particularly in power management systems. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 60V.
2. On-Resistance: Offers low R_DS(on), typically around 9.5 mΩ, enhancing efficiency by reducing conduction losses.
3. Current Handling: Capable of handling continuous drain currents up to 30A, suitable for demanding applications.
4. Thermal Performance: Designed with a low thermal impedance, facilitating better heat dissipation and enabling high power density designs.
5. Package: Available in a compact DPAK package, which allows for efficient PCB space utilization.
6. Fast Switching: Features rapid switching capabilities, making it ideal for applications like synchronous rectification in DC-DC converters.
7. Gate Threshold Voltage: Low gate threshold voltage allows for easy drive with standard logic-level signals.
These features make the CSD16409Q3 suitable for use in power supplies, motor drives, and other power management applications.

Package

The CSD16409Q3 is packaged in a 3x3 mm VQFN (Very Thin Quad Flat No-lead) format. This package type is designed for efficient thermal performance and reduced footprint, making it suitable for compact applications.

Pinout

The CSD16409Q3 is a Power MOSFET from Texas Instruments that features a total of 8 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET switching.
2. Source (S) - The terminal through which current exits the device.
3. Drain (D) - The terminal through which current enters the device.
In addition to these primary terminals, the remaining pins are typically used for package integrity and thermal management, such as providing a heat sink or connection to ground. This device is designed for high-efficiency power management applications, offering low on-resistance and fast switching speeds, making it suitable for use in synchronous rectification, DC-DC converters, and other power-related applications. The CSD16409Q3 is part of the NexFET™ family, known for its compact size and enhanced thermal performance.

Manufacturer

The CSD16409Q3 is manufactured by Texas Instruments (TI), a prominent American technology company. Established in 1930, Texas Instruments is known for designing and manufacturing semiconductors and various integrated circuits, which are widely used in electronics applications. The company specializes in analog and embedded processing, providing products that serve a diverse range of industries, including automotive, communications, consumer electronics, and industrial automation. TI is recognized for its innovation in power management solutions, which includes devices like the CSD16409Q3, a high-performance MOSFET designed for power applications.

Application

The CSD16409Q3 is a high-performance power MOSFET primarily used in applications such as DC-DC converters, power management systems, and synchronous rectification. Its low RDS(on) and fast switching capabilities make it suitable for use in power supplies, battery management systems, and electric vehicle powertrains. It can also be utilized in industrial power applications where efficiency and thermal management are critical.

Equivalent

The CSD16409Q3 is a N-channel MOSFET, and equivalent products include the CSD16410Q3, CSD16411Q3, and other similar N-channel MOSFETs from Texas Instruments or manufacturers like Infineon, ON Semiconductor, and Vishay. When selecting equivalents, ensure to match key specifications such as voltage rating, current rating, and RDS(on) characteristics. Always verify compatibility in your specific application.

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