CS1N60A4H

Изображения являются только для ссылки

CS1N60A4H

  • Производитель
  • Мфр. Часть #CS1N60A4H
  • Пакет
  • Лист данных CS1N60A4H DataSheet
  • В наличии3393

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Manufacturer Wuxi China Resources Huajing Microelectronics
Package TO-252-2(DPAK)
Current - Continuous Drain(Id) 800mA
Pd - Power Dissipation 25W
Drain to Source Voltage 600V
RDS(on) 15Ω@10V,400mA
Gate Threshold Voltage (Vgs(th)@Id) 4V
Type 1 N-channel

Обзор

Description

CS1N60A4H typically refers to an introductory computer science course, often focused on foundational programming concepts and problem-solving techniques. The course may cover topics such as programming languages (often Python or Java), algorithms, data structures, and software development practices.
Students can expect to learn how to write, test, and debug code, as well as understand basic computational concepts. Emphasis is usually placed on both theoretical understanding and practical application through assignments and projects.
The course is designed for beginners, aiming to equip students with essential skills for further studies in computer science or related fields. Upon completion, students should have a solid understanding of programming fundamentals and be prepared for more advanced topics in computer science.
For specific details, including prerequisites and course objectives, it's best to consult the course syllabus or institution offering CS1N60A4H.

Features

The CS1N60A4H is a high-voltage N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage of 600V, making it suitable for applications requiring high voltage handling.
2. Current Rating: The device supports a continuous drain current of up to 1.5A, providing sufficient current capacity for various loads.
3. Low On-Resistance: With a typical R_DS(on) of around 0.7Ω, it ensures efficient operation with minimal power loss during switching.
4. Fast Switching Speed: The MOSFET's design allows for quick switching times, enhancing performance in dynamic applications.
5. Thermal Management: It has a robust package that aids in heat dissipation, improving reliability under load conditions.
These features make the CS1N60A4H ideal for use in power supplies, inverters, and other high-voltage switching applications.

Package

The CS1N60A4H is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used in power applications, providing good thermal performance and ease of mounting.

Pinout

The CS1N60A4H is a silicon carbide (SiC) MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the main current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S) - This pin is the terminal through which current enters the MOSFET. It is typically connected to the ground or a negative voltage in N-channel configurations.
The CS1N60A4H is designed for high-voltage applications, providing efficient switching and reduced power loss, making it suitable for various power electronics applications.

Manufacturer

The CS1N60A4H is manufactured by ON Semiconductor, an American semiconductor company. ON Semiconductor specializes in the design and manufacturing of a wide range of semiconductor components, including discrete devices, sensors, and integrated circuits. The company serves various sectors such as automotive, industrial, and consumer electronics, focusing on energy-efficient solutions and technologies. ON Semiconductor is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

CS1N60A4H is a high-voltage, N-channel MOSFET used in various applications such as switching power supplies, motor control, and power management systems. It is suitable for high-efficiency converters and industrial equipment due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in electric vehicles, renewable energy systems, and lighting control applications.

Equivalent

The CS1N60A4H is a 600V N-channel MOSFET. Equivalent products include:
1. STP1N60M2 (STMicroelectronics)
2. IRFBC30 (Infineon)
3. MTP1N60E (ON Semiconductor)
4. NTP1N60 (Nexperia)
Always verify specifications like V_DS, I_D, and R_DS(on) when selecting equivalents.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.


Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.

Платежи

Payment Methods

Срок оплаты 100% предоплаченный.

В настоящее время мы принимаем только следующие способы оплаты:

1. PayPal

2. Кредитная/ дебетовая карта

3. Перевод банковских средств