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C3M0032120K

Name: C3M0032120K
Rating: 4.7 (12 reviews)

SICFET N-CH 1200V 63A TO247-4L

Производитель
Мфр. Часть #C3M0032120K
Пакет TO-247-4
Лист данных C3M0032120K DataSheet
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Спецификации

Package	Tube
Series	C3M™
ProductStatus	Active
FETType	N-Channel
Technology	SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)	1200 V
Current-ContinuousDrain(Id)@25°C	63A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	15V
RdsOn(Max)@IdVgs	43mOhm @ 40A, 15V
Vgs(th)(Max)@Id	3.6V @ 11.5mA
GateCharge(Qg)(Max)@Vgs	118 nC @ 15 V
Vgs(Max)	+15V, -4V
InputCapacitance(Ciss)(Max)@Vds	3357 pF @ 1000 V
PowerDissipation(Max)	283W (Tc)
OperatingTemperature	-40°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247-4L

Обзор

Description

C3M0032120K refers to a specific course or module code, typically used in academic settings. While the exact details may vary by institution, courses with similar codes often cover topics in management, economics, or related fields. The introduction would likely outline the course objectives, key themes, and learning outcomes, emphasizing foundational concepts relevant to the subject area. Students can expect to engage with core theories, case studies, and practical applications, fostering critical thinking and analytical skills. For precise information, including prerequisites, syllabus, and assessment methods, it's best to consult the specific institution offering the course.

Features

The C3M0032120K is a compact, high-performance integrated circuit designed for applications in power management and energy efficiency. Key features include:
1. Voltage Range: Operates within a wide input voltage range, making it suitable for various applications.
2. High Efficiency: Offers high conversion efficiency, reducing energy loss and heat generation.
3. Compact Package: Housed in a small form factor, ideal for space-limited designs.
4. Integrated Protection: Includes built-in over-voltage, over-current, and thermal protection to ensure reliability.
5. Flexible Configurations: Supports multiple output configurations, allowing for versatile implementations in different systems.
6. Low Standby Power: Designed to minimize power consumption during idle states, enhancing overall energy efficiency.
These features make the C3M0032120K a suitable choice for modern electronic devices requiring reliable and efficient power solutions.

Package

The C3M0032120K is typically packaged in a TO-247 format, which is a high-power package suitable for applications requiring efficient heat dissipation.

Pinout

The C3M0032120K is a Silicon Carbide (SiC) MOSFET from the C3M series produced by Cree (now Wolfspeed). It features a total of 5 pins. The pin configuration includes:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows out.
3. Source (S) - The terminal through which the load current enters.
4. NC (Not Connected) - Typically not connected or used for isolation.
5. Heatsink (HS) - Sometimes included for thermal management, depending on the package type.
The device is designed for high-efficiency power applications, operating at high voltage and temperatures, making it suitable for applications like inverters, power supplies, and motor drives.

Manufacturer

The C3M0032120K is manufactured by Wolfspeed, Inc., a leading company in the semiconductor industry, particularly known for its expertise in wide bandgap materials like Silicon Carbide (SiC) and Gallium Nitride (GaN). Wolfspeed specializes in producing high-performance power and radio frequency (RF) devices, which are essential for applications in electric vehicles, renewable energy systems, and telecommunications. The company is focused on advancing the efficiency and performance of electronic systems through innovative semiconductor solutions.

Application

C3M0032120K is a high-performance silicon carbide (SiC) MOSFET primarily used in applications such as power electronics, electric vehicles, renewable energy systems, and industrial motor drives. Its advantages include high efficiency, fast switching speeds, and thermal stability, making it suitable for high-voltage and high-temperature environments.

Equivalent

The C3M0032120K chip is a SiC MOSFET. Equivalent products include:
1. Cree/Wolfspeed C3M0032120K
2. Infineon IDW20G65C5
3. ON Semiconductor NTMFS5C628NL
4. ROHM SCT3C12A
Always verify specifications such as voltage, current ratings, and thermal performance to ensure compatibility.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.