C3M0021120K

Изображения являются только для ссылки

C3M0021120K

SICFET N-CH 1200V 100A TO247-4L

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package Tube
Series C3M™
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 15V
RdsOn(Max)@IdVgs 28.8mOhm @ 50A, 15V
Vgs(th)(Max)@Id 3.6V @ 17.7mA
GateCharge(Qg)(Max)@Vgs 162 nC @ 15 V
Vgs(Max) +15V, -4V
InputCapacitance(Ciss)(Max)@Vds 4818 pF @ 1000 V
PowerDissipation(Max) 469W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-4L

Обзор

Description

C3M0021120K appears to be a specific code or identifier, possibly for a product, part, or course. Without additional context, it's difficult to provide a precise introduction. If it pertains to a specific field, such as technology, education, or manufacturing, please provide more details for a more tailored response. If it’s a course code, it may relate to a particular subject or program at an educational institution. If it’s a product or part number, it could refer to specifications or features relevant to that item. Providing context will enable a more accurate and informative introduction.

Features

The C3M0021120K is a compact, high-performance current sensor featuring a Hall effect technology. It provides precise and reliable measurements of AC and DC currents. Key features include:
1. Current Measurement Range: Typically supports a wide range of current readings, suitable for various applications.
2. High Accuracy: Offers accurate sensing with minimal offset and temperature drift.
3. Low Power Consumption: Designed to operate efficiently, making it suitable for battery-powered devices.
4. Compact Size: Its small form factor allows for easy integration into limited spaces.
5. Isolation: Provides electrical isolation between the primary current circuit and the secondary output, ensuring safety and protection for downstream components.
6. Output Type: Usually features an analog output, allowing for easy interfacing with microcontrollers and signal processing systems.
7. Temperature Range: Operable across a wide temperature range, enhancing its versatility in different environments.
These features make the C3M0021120K ideal for applications in industrial automation, renewable energy, and smart grid technologies.

Package

The C3M0021120K is typically packaged in a TO-220 style package, which is suitable for high-power applications due to its efficient thermal performance. This package type allows for easy heat dissipation and is commonly used for power electronic devices.

Pinout

The C3M0021120K is a silicon carbide (SiC) MOSFET module with a pin count of 6. It is designed for high-efficiency power switching applications. The primary functions of this module include high voltage and high temperature operation, making it suitable for applications such as power converters, inverters, and motor drives. The terminals typically include Gate (G), Source (S), and Drain (D) connections, facilitating control and connection to external circuitry. Its robust performance characteristics enable it to handle high power levels while minimizing losses, contributing to improved overall system efficiency.

Manufacturer

The C3M0021120K is a power MOSFET manufactured by Cree, Inc., which is now part of Wolfspeed, Inc. Wolfspeed specializes in wide bandgap semiconductor technology, particularly focusing on silicon carbide (SiC) and gallium nitride (GaN) materials. The company provides high-performance power and radio frequency (RF) solutions for various applications, including electric vehicles, renewable energy, and industrial power systems. Wolfspeed is recognized for its innovation in the semiconductor industry, especially in enhancing efficiency and thermal performance for power electronics.

Application

C3M0021120K is a silicon carbide (SiC) MOSFET primarily used in high-efficiency power electronics applications. Its application areas include electric vehicles, renewable energy systems (like solar inverters), industrial motor drives, and power supplies for data centers. The device's high thermal conductivity and superior switching characteristics make it ideal for improving energy efficiency and thermal management in demanding environments.

Equivalent

The C3M0021120K is a 1200V, 2A SiC MOSFET. Equivalent products include:
1. C3M0012120K (1.2kV, 1A)
2. C3M0021120K - similar specs, different manufacturers
3. Cree/Wolfspeed C2M0025120K (2.5A, 1200V)
4. ON Semiconductor MPSH-1200V (similar specs)
Always confirm specific application requirements and parameters for compatibility.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.


Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.

Платежи

Payment Methods

Срок оплаты 100% предоплаченный.

В настоящее время мы принимаем только следующие способы оплаты:

1. PayPal

2. Кредитная/ дебетовая карта

3. Перевод банковских средств