C2M0080120D

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C2M0080120D

SICFET N-CH 1200V 36A TO247-3

  • Производитель
  • Мфр. Часть #C2M0080120D
  • Пакет
  • Лист данных C2M0080120D DataSheet
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Спецификации

Series C2M™
Part Status Obsolete
Base Product Number C2M0080120
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 5 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 1000 V
Power Dissipation (Max) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package TO-247-3
Packaging Bulk

Обзор

Description

C2M0080120D is a specific identifier that typically refers to a product, component, or part number in a technical or industrial context. It may be used in sectors such as electronics, manufacturing, or supply chain management to denote a particular item, including its specifications, features, or compatibility with other systems.
Such identifiers are crucial for inventory management, ensuring accurate tracking, and facilitating communication across various departments or with suppliers. Understanding the context in which C2M0080120D is used is essential for its proper application, as it may relate to specific industries or product categories.
For more detailed information, consulting the manufacturer's datasheet or technical documentation associated with C2M0080120D would provide insights regarding its use, specifications, and any relevant applications or limitations.

Features

The C2M0080120D is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications including power management and switching. Key features include:
1. Voltage Rating: It typically offers a maximum drain-source voltage (Vds) of around 120V, allowing it to handle high-voltage applications.

2. Current Rating: It can support substantial continuous drain current, often around 8A, making it suitable for high-current applications.
3. Low On-State Resistance: The Rds(on) (drain-source on-resistance) is low, which reduces power losses during operation and improves efficiency.
4. Fast Switching Speed: The device is designed for rapid switching, making it ideal for high-frequency applications.
5. Thermal Performance: It usually has good thermal stability and can operate efficiently at higher temperatures.
6. Package Type: Typically available in TO-220 or similar packages for easy heat dissipation and mounting.
These features make the C2M0080120D suitable for various applications such as DC-DC converters, motor drives, and power inverters.

Package

The C2M0080120D is a Silicon Carbide (SiC) MOSFET packaged in a TO-247 type package. This package type is designed for high-power applications, providing efficient heat dissipation and robust performance.

Pinout

The C2M0080120D is a 1200V, 80A Silicon Carbide (SiC) MOSFET. It comes in a TO-247 package, which features a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a sufficient voltage between the gate and source turns the device on.
2. Drain (D): This pin connects to the load, allowing current to flow through the MOSFET when it is in the on-state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit.
The C2M0080120D is designed for high-efficiency applications in power electronics, such as inverters and converters. Its SiC technology allows for high-temperature operation and reduced switching losses compared to traditional silicon devices.

Manufacturer

The C2M0080120D is a silicon carbide (SiC) MOSFET manufactured by Cree, Inc., which is now known as Wolfspeed, a part of the larger Cree family. Wolfspeed specializes in wide bandgap semiconductor technology, focusing on silicon carbide and gallium nitride (GaN) materials. The company is a leading provider of high-performance power and radio frequency (RF) solutions, widely used in electric vehicles, renewable energy systems, and other advanced applications. Wolfspeed aims to enhance efficiency and reduce the environmental impact of electronics through its innovative semiconductor technologies.

Application

C2M0080120D is a silicon carbide (SiC) MOSFET used in various applications, including electric vehicles, industrial motor drives, power supplies, and renewable energy systems. Its high efficiency and thermal performance make it suitable for high-frequency switching applications, enhancing energy savings and system reliability.

Equivalent

The C2M0080120D chip is a 1200V, 80A SiC MOSFET. Equivalent products include the Infineon FF1200R12ME4, Wolfspeed C3M0065120K, and ON Semiconductor NTP120N12. Always verify specifications and compatibility based on your application requirements.

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