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BSS127H6327XTSA2

Name: BSS127H6327XTSA2
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 21MA SOT23-3

Производитель
Мфр. Часть #BSS127H6327XTSA2
Пакет
Лист данных BSS127H6327XTSA2 DataSheet
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Спецификации

Series	SIPMOS®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id	2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs	1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	28 pF @ 25 V
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT23
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	BSS127

Обзор

Description

The BSS127H6327XTSA2 is a type of N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It is characterized by low on-resistance, high-speed switching capabilities, and suitable for low-voltage, high-efficiency circuits. The device can be used in power management systems, switching regulators, and motor control applications.
Key specifications typically include a maximum drain-source voltage (Vds), continuous drain current (Id), and gate threshold voltage (Vgs(th)). The BSS127 features a TO-92 package, making it suitable for through-hole mounting in PCB designs. Its compact size and efficiency make it a popular choice in consumer electronics, automotive applications, and industrial systems.
When integrating this MOSFET into a circuit, proper thermal management and drive voltage considerations are crucial for optimal performance. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.

Features

The BSS127H6327XTSA2 is an N-channel MOSFET designed for various switching applications. Key features include:
- Voltage Rating: Typically supports a drain-source voltage (Vds) of up to 60V.
- Current Rating: Capable of handling continuous drain currents up to around 1.5A.
- RDS(on): Low on-resistance, typically around 0.8 ohms, improving efficiency by reducing heat generation.
- Gate Threshold Voltage (Vgs(th)): Usually ranges between 1V to 3V, allowing for effective operation at low gate voltages.
- Package: Available in a compact SOT-23 package, ensuring efficient use of PCB space.
- Fast Switching: Optimized for rapid switching applications, suitable for driving loads in power management and signal switching.
- Thermal Resistance: Good thermal performance allows for reliable operation in various environments.
This MOSFET is ideal for applications in power management, battery-powered devices, and general-purpose switching tasks.

Package

The BSS127H6327XTSA2 is a N-channel MOSFET packaged in a SOT-23 form factor.

Pinout

The BSS127H6327XTSA2 is a N-channel MOSFET with a total of 3 pins. Its primary functions are to act as a switch or amplifier in various electronic circuits. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET’s operation, turning it on or off by applying a voltage.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the entry point for current into the MOSFET.
Typically, the BSS127 is used in low-voltage applications and can handle up to 60V with a maximum continuous drain current of about 1.5A. It is commonly employed in switching applications, such as in power management and signal amplification.

Manufacturer

The BSS127H6327XTSA2 is manufactured by NXP Semiconductors, a global semiconductor company. NXP specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, processors, and various types of transistors and diodes. The BSS127 is a specific type of N-channel MOSFET, commonly used in electronic circuits for switching and amplification applications. NXP Semiconductors serves diverse markets such as automotive, industrial, mobile, and consumer electronics, providing innovative solutions that enhance connectivity and sustainability. The company is known for its focus on security and efficiency in electronic design, making it a key player in the semiconductor industry.

Application

The BSS127H6327XTSA2 is an N-channel MOSFET commonly used in applications such as power management, switching regulators, and load drivers. Its features make it suitable for battery management systems, motor control, LED drivers, and general-purpose switching applications in consumer electronics, automotive, and industrial systems. Its compact size and efficiency enable it to support compact designs in various electronic devices.

Equivalent

The BSS127H6327XTSA2 is an N-channel MOSFET. Equivalent products include the BSS127, IRLML2502, and 2N7002. Always check specifications like V_DS, I_D, R_DS(on), and package type for compatibility.

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