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BSC109N10NS3 G

Name: BSC109N10NS3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 100V 63A TDSON-8 OptiMOS 3

Производитель
Мфр. Часть #BSC109N10NS3 G
Пакет
Лист данных BSC109N10NS3 G DataSheet
В наличии13501

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Спецификации

Packaging	MouseReel
Standard Pack Qty	5000

Обзор

Description

BSC109N10NS3 G is an introductory course designed to provide students with foundational knowledge in biological sciences. The course covers essential concepts such as cell structure and function, genetics, evolution, ecology, and the diversity of life. Students will engage with scientific methods, critical thinking, and laboratory techniques, fostering an appreciation for the biological systems that govern life.
The curriculum typically includes lectures, discussions, and hands-on laboratory experiences, allowing students to apply theoretical knowledge in practical settings. The course is suitable for those pursuing further studies in biology, health sciences, or related fields. Assessments may include quizzes, exams, lab reports, and group projects to evaluate understanding and application of the material.
Overall, BSC109N10NS3 G aims to equip students with a solid understanding of biological principles and their relevance to everyday life and the environment.

Features

The BSC109N10NS3 G is a high-performance N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 90A, providing significant power handling capabilities.
3. Low On-Resistance: With a low R_DS(on) value, it minimizes conduction losses, enhancing overall efficiency.
4. Fast Switching Speed: Designed for rapid switching, it supports high-frequency applications, making it ideal for power supplies and motor drivers.
5. Thermal Performance: It has a robust thermal management capability, with a maximum junction temperature (T_J) of 175°C.
6. Package Type: Typically available in a TO-220 package, allowing for easy heat dissipation and mounting.
These features make the BSC109N10NS3 G suitable for various applications, including power management, automotive systems, and industrial controls.

Package

The BSC109N10NS3 G is packaged in a DPAK (TO-252) configuration. This surface-mount package is designed for efficient thermal performance and is commonly used for power MOSFET applications.

Pinout

The BSC109N10NS3 G is a N-channel MOSFET with a total of 8 pins. Its pin configuration and functions are as follows:
1. Gate (G) - Pin 1: Controls the MOSFET operation, allowing it to turn on/off.
2. Drain (D) - Pin 2: The main current-carrying pin where the load connects.
3. Source (S) - Pin 3: The terminal through which current exits the MOSFET.
4. Drain (D) - Pin 4: Second Drain pin for enhanced current handling.
5. Source (S) - Pin 5: Second Source pin to improve thermal performance.
6. Gate (G) - Pin 6: Second Gate pin for improved drive capability.
7. Drain (D) - Pin 7: An additional Drain pin option.
8. Source (S) - Pin 8: An additional Source pin option.
This MOSFET is designed for high-efficiency switching applications, with a low R_DS(on) for reduced power loss.

Manufacturer

The BSC109N10NS3 G is manufactured by Infineon Technologies, a global semiconductor manufacturer. Infineon specializes in various electronic components, including power semiconductors, microcontrollers, sensors, and automotive solutions. The company is known for its innovation in energy efficiency and is a key player in the automotive, industrial, and communication technology sectors. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon has a strong presence in the global market, focusing on the development of advanced technologies that enable smart and secure connectivity.

Application

The BSC109N10NS3 G is a N-channel MOSFET used in various applications, including power management, motor control, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for use in automotive, industrial, and consumer electronics. It can also be employed in DC-DC converters, high-efficiency power supplies, and battery management systems, enhancing energy efficiency and performance in these applications.

Equivalent

The BSC109N10NS3 G is an N-channel MOSFET. Equivalent products include the IRF540, STP16NF06, and FQP30N06L. When seeking substitutes, ensure they match key specifications such as voltage, current rating, and RDS(on) characteristics for optimal performance in your application. Always consult datasheets for detailed comparisons.

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УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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