Изображения являются только для ссылки

BSC060N10NS3G

Name: BSC060N10NS3G
Rating: 4.7 (12 reviews)

Производитель
Мфр. Часть #BSC060N10NS3G
Пакет
Лист данных
В наличии9412

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Manufacturer	Infineon Technologies
Package	TDSON-8-EP(5x6)
Operating Temperature	-55℃~+150℃
RDS(on)	6mΩ@10V,50A
Drain to Source Voltage	100V
Pd - Power Dissipation	125W
Current - Continuous Drain(Id)	90A
Reverse Transfer Capacitance (Crss@Vds)	25pF
Input Capacitance(Ciss@Vds)	4.9nF
Gate Charge(Qg)	68nC@10V
Number	1 N-channel

Обзор

Description

The BSC060N10NS3G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage of 100V and a continuous current rating of 60A, making it suitable for power management in various electronic devices. The device is optimized for low on-resistance (R_DS(on)), which reduces power loss during operation and improves thermal performance.
This MOSFET is commonly used in applications such as DC-DC converters, motor drives, and power supplies. Its low gate charge facilitates fast switching, enhancing overall system efficiency. Additionally, the BSC060N10NS3G is packaged in a TO-220 format, which aids in thermal dissipation, allowing for better heat management in high-load situations.
Overall, the BSC060N10NS3G is an effective choice for designers seeking reliable, high-performance solutions in power electronics.

Features

The BSC060N10NS3G is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (Id) up to 60A, allowing it to manage significant power loads.
3. On-Resistance (Rds(on)): With a low on-resistance of around 6.0 mΩ at Vgs = 10V, it ensures minimal power loss and high efficiency during operation.
4. Fast Switching Speed: The MOSFET has a fast switching capability, which is beneficial for high-frequency applications.
5. Package Type: It is typically available in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
Overall, the BSC060N10NS3G is ideal for applications such as DC-DC converters, motor drives, and other power management systems where efficiency and thermal performance are critical.

Package

The BSC060N10NS3G is available in a TO-220 package type. This package provides good thermal performance and is suitable for various applications, including power management and switching.

Pinout

The BSC060N10NS3G is an N-channel MOSFET from Infineon Technologies, specifically designed for high-efficiency switching applications. It features a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is activated.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current.
The BSC060N10NS3G is optimized for low on-resistance and high-speed switching, making it suitable for applications in DC-DC converters, power management, and motor control.

Manufacturer

The BSC060N10NS3G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in various technology sectors, including power semiconductors, automotive solutions, industrial power control, and security technologies. The company is known for producing high-performance electronic components that are essential for energy efficiency and connectivity in a wide range of applications, from automotive and industrial systems to consumer electronics and IoT devices. Infineon is headquartered in Neubiberg, Germany, and operates globally, focusing on innovation and sustainability in its product offerings.

Application

The BSC060N10NS3G is a N-channel MOSFET suitable for various applications, including power management in DC-DC converters, motor drives, and power supplies. It is ideal for automotive and industrial applications due to its high efficiency, low on-resistance, and fast switching capabilities. Additionally, it can be used in renewable energy systems, such as solar inverters, and in consumer electronics for efficient power handling.

Equivalent

The BSC060N10NS3G is a N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP60NF06
3. FQD30N06L
4. IXFH30N10P
5. PSMN2R8-30PL
Ensure to verify parameters like voltage rating, current capacity, RDS(on), and package type for compatibility in your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.