Изображения являются только для ссылки

BC856BDW1T1G

Name: BC856BDW1T1G
Rating: 4.7 (12 reviews)

TRANS 2PNP 65V 0.1A SC88/SC70-6

Производитель
Мфр. Часть #BC856BDW1T1G
Пакет SOT-363-6
Лист данных
В наличии5713

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	2 PNP (Dual)
Current-Collector(Ic)(Max)	100mA
Voltage-CollectorEmitterBreakdown(Max)	65V
VceSaturation(Max)@IbIc	650mV @ 5mA, 100mA
Current-CollectorCutoff(Max)	15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce	220 @ 2mA, 5V
Power-Max	380mW
Frequency-Transition	100MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	6-TSSOP, SC-88, SOT-363

Обзор

Description

The BC856BDW1T1G is a low-power, PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is housed in a SOT-23 package, which is compact and suitable for surface mounting. This transistor features a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V, making it suitable for low-voltage applications.
Key specifications include a DC current gain (hFE) range of 100 to 600, allowing effective amplification of small signals. The BC856BDW1T1G is often used in audio circuits, signal processing, and low-power switching applications.
When using the BC856BDW1T1G, it's important to consider thermal management and biasing conditions to ensure optimal performance and prevent damage. Overall, this transistor is a versatile component widely used in consumer electronics and other applications requiring reliable switching and amplification.

Features

The BC856BDW1T1G is a dual NPN transistor packaged in a SOT-23 form factor. It features low noise characteristics and is suitable for small signal amplification and switching applications. Key specifications include:
- Max Collector-Emitter Voltage (Vce): 45V
- Max Collector Current (Ic): 100mA
- Max Power Dissipation (Pd): 300mW
- Current Gain (hFE): Typically ranges from 100 to 400 at a collector current of 10mA.
- Transition Frequency (ft): Typically 150 MHz, enabling high-speed applications.
- Operating Junction Temperature: Ranges from -55°C to +150°C.
This transistor is ideal for low-power applications in portable devices, consumer electronics, and other compact circuitry where space and efficiency are critical. Its high gain and low noise make it a popular choice for audio and RF applications.

Package

The BC856BDW1T1G is packaged in a SOT-23 surface-mount package. This small, plastic package is designed for space-constrained applications and provides efficient thermal performance.

Pinout

The BC856BDW1T1G is a low-noise PNP bipolar junction transistor (BJT) packaged in a SOT-23 format. It features a pin count of three. The pin configuration is as follows:
1. Collector (C) - Pin 1
2. Base (B) - Pin 2
3. Emitter (E) - Pin 3
The transistor is designed for general-purpose amplification and switching applications. It offers low saturation voltage and high gain, making it suitable for use in audio and RF amplification circuits. The BC856 series is particularly noted for its low noise characteristics, which is beneficial in sensitive electronic applications. The device typically operates in environments with a maximum collector current of 100 mA and a collector-emitter voltage of 45 V.

Manufacturer

The BC856BDW1T1G is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor provides a wide range of products including analog, digital, and mixed-signal semiconductors, as well as power management and other integrated circuit products. The company serves various markets such as automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through strategic acquisitions and focuses on innovation in energy-efficient technologies and sustainable practices.

Application

The BC856BDW1T1G is a general-purpose PNP bipolar junction transistor (BJT) used in various applications, including signal amplification, switching, and voltage regulation. It is commonly found in consumer electronics, audio equipment, and small-signal applications, especially in low-frequency circuits. Its low noise and high gain characteristics make it suitable for amplifier stages in audio devices and control circuits in automated systems.

Equivalent

The BC856BDW1T1G is a PNP bipolar junction transistor (BJT). Equivalent products include the BC557, 2N2907, and MPS2222A. Ensure to verify specifications such as voltage, current ratings, and package type for compatibility in your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.