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BAT54SWT1G

Name: BAT54SWT1G
Rating: 4.7 (12 reviews)

RECTIFIER DIODE, SCHOTTKY, 2 ELE

Производитель
Мфр. Часть #BAT54SWT1G
Пакет SC-70-3
Лист данных BAT54SWT1G DataSheet
В наличии5573

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Спецификации

Package	Bulk
ProductStatus	Active
DiodeConfiguration	1 Pair Series Connection
DiodeType	Schottky
Voltage-DCReverse(Vr)(Max)	30 V
Current-AverageRectified(Io)(perDiode)	200mA (DC)
Voltage-Forward(Vf)(Max)@If	800 mV @ 100 mA
Speed	Small Signal =< 200mA (Io), Any Speed
ReverseRecoveryTime(trr)	5 ns
Current-ReverseLeakage@Vr	2 µA @ 25 V
OperatingTemperature-Junction	-55°C ~ 125°C
MountingType	Surface Mount
Package/Case	SC-70, SOT-323

Обзор

Description

The BAT54SWT1G is a Schottky barrier diode manufactured by ON Semiconductor. It features low forward voltage drop, fast switching speed, and low reverse leakage current, making it ideal for a variety of applications. With a maximum reverse voltage rating of 30V and a forward current rating of 200mA, it is commonly used in low-power switching applications, RF design, and as a rectifier in power supply circuits.
The device is housed in a compact SOT-23 package, facilitating space-efficient designs. Its performance characteristics allow for improved efficiency in electronic circuits, particularly in battery-powered devices where energy conservation is critical.
The BAT54SWT1G is often selected for its reliability and effectiveness in protecting sensitive components from voltage spikes. Overall, it serves as a versatile component suitable for both consumer electronics and industrial applications.

Features

The BAT54SWT1G is a Schottky barrier diode designed for high-speed switching applications. Key features include:
1. Low Forward Voltage Drop: It typically has a forward voltage drop of around 0.3V, allowing for efficient operation in low-voltage applications.
2. Fast Switching Speed: The diode offers rapid switching capabilities, making it suitable for high-frequency applications.
3. Low Reverse Leakage Current: Provides minimal reverse leakage, enhancing efficiency and reducing power loss.
4. Small Package Size: Housed in a compact SOT-23 package, it allows for space-efficient designs in PCBs.
5. Wide Operating Temperature Range: The diode operates effectively in temperatures ranging from -55°C to +150°C.
6. Multiple Configurations: Available in single and dual configurations for versatile applications.
These features make the BAT54SWT1G ideal for use in RF applications, switching power supplies, and as protection diodes in various electronic circuits.

Package

The BAT54SWT1G is packaged in a SOT-23 form factor. This is a small, surface-mount package commonly used for low-power, high-speed switching applications.

Pinout

The BAT54SWT1G is a Schottky barrier diode commonly used in low-voltage applications. It features a total of three pins. The pin configuration is as follows:
1. Anode (A): This pin is where the positive voltage is applied.
2. Cathode (K): This pin is the output side of the diode, where the current flows out.
3. Common (C): This pin is used for the shared connection in dual configurations.
The BAT54SWT1G is designed for switching and rectification applications, offering low forward voltage drop and fast switching speed, making it suitable for use in RF applications, signal clamping, and low-power rectification tasks. It is often packaged in the SOT-23 form factor, making it compact and easy to integrate into various electronic circuits.

Manufacturer

The BAT54SWT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in a wide range of electronic components, including power management, analog, and mixed-signal devices, as well as various sensors and connectivity solutions. The company serves multiple industries, including automotive, industrial, telecommunications, and consumer electronics. It focuses on providing energy-efficient products and solutions to meet the demands of modern electronics.

Application

The BAT54SWT1G is a Schottky barrier diode commonly used in applications such as rectification, voltage clamping, and RF switching. Its low forward voltage drop and fast switching speed make it ideal for power management in portable devices, DC-DC converters, and signal processing circuits. Additionally, it can be employed in protection circuits to prevent reverse polarity damage and in high-frequency applications due to its low capacitance.

Equivalent

The BAT54SWT1G is a Schottky diode with a low forward voltage drop and fast switching speed. Equivalent products include the BAW56, BAW56M, 1N5817, and BTA10-400V. Always consult datasheets for specific electrical characteristics to ensure compatibility in your application.

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