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BAS16LT1G

Name: BAS16LT1G
Rating: 4.7 (12 reviews)

DIODE GP 100V 200MA SOT23-3

Производитель
Мфр. Часть #BAS16LT1G
Пакет SOT23-3
Лист данных
В наличии4041

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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
DiodeType	Standard
Voltage-DCReverse(Vr)(Max)	100 V
Current-AverageRectified(Io)	200mA (DC)
Voltage-Forward(Vf)(Max)@If	1.25 V @ 150 mA
Speed	Small Signal =< 200mA (Io), Any Speed
ReverseRecoveryTime(trr)	6 ns
Current-ReverseLeakage@Vr	1 µA @ 100 V
Capacitance@VrF	2pF @ 0V, 1MHz
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3
SupplierDevicePackage	SOT-23-3 (TO-236)

Обзор

Description

The BAS16LT1G is a small-signal Schottky diode designed for high-speed switching applications. It features a low forward voltage drop, typically around 0.45V at 1A, making it efficient for applications requiring fast response times and minimal power loss. The diode can handle a reverse voltage of up to 45V and has a maximum average rectified forward current of 200mA.
This device is commonly used in rectification, clamping, and signal detection circuits, as well as in power management applications. The BAS16LT1G comes in a compact SOT-23 package, making it suitable for space-constrained designs. Its low leakage current and high switching speeds make it ideal for use in battery-operated devices and portable electronics.
Overall, the BAS16LT1G is a versatile component that supports various applications requiring reliable performance under different operating conditions.

Features

The BAS16LT1G is a switching diode designed for high-speed applications. Key features include:
1. Fast Switching Speed: Ideal for high-frequency applications, with a reverse recovery time (trr) of approximately 4 ns.
2. Low Forward Voltage Drop: Forward voltage (Vf) is typically around 0.7V at 1 mA, ensuring efficient operation.
3. High Reverse Voltage: Capable of withstanding a maximum reverse voltage (V_R) of 85V, making it suitable for various applications.
4. Compact Surface Mount Package: Available in a small SOD-123 package, facilitating space-saving designs.
5. Wide Operating Temperature Range: Operating temperature ranges from -55°C to +150°C, ensuring reliability in diverse environments.
6. Low Leakage Current: Low reverse leakage current (I_R) at rated voltage, enhancing performance in low-power applications.
These features make the BAS16LT1G suitable for use in signal processing, switching applications, and various electronic circuits.

Package

The BAS16LT1G is packaged in a SOT-23 surface-mount package. This compact package is designed for efficient space utilization on circuit boards, making it suitable for various electronic applications.

Pinout

The BAS16LT1G is a small-signal Schottky barrier diode in a SOT-23 package. It has a total of three pins.
Pin Functions:
1. Anode (A): This is the positive terminal of the diode where the current enters.
2. Cathode (K): This is the negative terminal of the diode where the current exits. It is also marked with a band on the package.
3. Case (Ground): The case can be connected to ground, providing thermal and electrical stability.
The BAS16LT1G is commonly used in applications such as clamping, protection circuits, and high-speed switching due to its low forward voltage drop and fast recovery time.

Manufacturer

The BAS16LT1G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including discrete devices, analog, and mixed-signal integrated circuits, as well as power management and RF devices. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Through its innovative technologies and extensive product portfolio, ON Semiconductor plays a critical role in enabling energy-efficient designs and sustainable solutions across multiple applications.

Application

The BAS16LT1G is a small-signal Schottky diode used in various applications, including signal clamping, voltage regulation, and fast switching circuits. It is commonly employed in RF applications, rectification in low-voltage power supplies, and protection circuits against voltage transients. Its low forward voltage drop and fast switching speed make it suitable for high-frequency applications and low-power electronic devices.

Equivalent

The BAS16LT1G is a Schottky barrier diode. Equivalent products include 1N5817, 1N5819, BAT54, and MBR1100. For specific applications, consider voltage and current ratings, as well as package types. Always verify specifications before substituting.

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