AS6C8016-55ZIN

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AS6C8016-55ZIN

IC SRAM 8MBIT PARALLEL 44TSOP II

  • Производитель
  • Мфр. Часть #AS6C8016-55ZIN
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  • Лист данных AS6C8016-55ZIN DataSheet
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Спецификации

Part Status Active
Base Product Number AS6C8016
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 8Mbit
Memory Organization 512K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 55ns
Voltage - Supply 2.7V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Packaging Tray
Access Time 55 ns

Обзор

Description

The AS6C8016-55ZIN is a high-performance, low-power static random-access memory (SRAM) chip with 1 megabit (128K x 8 bits) capacity. It operates at speeds of up to 55 nanoseconds, making it suitable for applications requiring fast access times. The chip is available in a 32-pin SOP (Small Outline Package) and supports a wide operating voltage range, typically between 2.7V and 3.6V, which enhances its versatility in various electronic designs.
Key features include asynchronous read and write capabilities, making it easy to integrate into existing systems without the need for complex timing controls. The AS6C8016-55ZIN is ideal for use in consumer electronics, telecommunications, and industrial applications where reliable, quick data storage and retrieval are crucial.
Its low power consumption enables extended battery life in portable devices, while its robust design ensures data integrity under varying conditions. Overall, the AS6C8016-55ZIN stands out as a dependable option for engineers seeking efficient memory solutions in their designs.

Features

The AS6C8016-55ZIN is a CMOS static RAM (SRAM) chip with the following key features:
1. Capacity: 1 Megabit (128K x 8 bits).
2. Access Time: 55 ns, allowing for fast data retrieval.
3. Supply Voltage: Operates at 3.0V to 3.6V, making it suitable for low-power applications.
4. Low Power Consumption: Ideal for battery-operated devices.
5. Asynchronous Operation: No need for external clocks, simplifying system design.
6. Single Chip Configuration: Offers a straightforward integration into various electronic circuits.
7. Pin Compatibility: Designed for easy replacement with other similar SRAMs.
8. Temperature Range: Typically operates within a standard industrial temperature range.
These features make the AS6C8016-55ZIN suitable for a variety of applications, including consumer electronics, telecommunications, and industrial equipment where reliable and fast memory is essential.

Package

The AS6C8016-55ZIN is typically packaged in a 32-pin SOIC (Small Outline Integrated Circuit) format. This package type is surface-mounted and designed for efficient space utilization on PCBs.

Manufacturer

The AS6C8016-55ZIN is manufactured by Alliance Semiconductor Corporation. Alliance Semiconductor is a semiconductor company that specializes in providing high-performance memory and mixed-signal solutions. They focus on designing and manufacturing a variety of memory products, including SRAM, DRAM, and Flash memory, as well as other semiconductor devices for applications in consumer electronics, telecommunications, and industrial markets. The company is known for its emphasis on quality, reliability, and innovation within the semiconductor industry.

Application

The AS6C8016-55ZIN is a 16Mb static RAM (SRAM) used in various applications, including networking equipment, telecommunications, embedded systems, and consumer electronics. It is suitable for cache memory, data buffering, and applications requiring high-speed data access. Additionally, it is commonly utilized in automotive systems, industrial automation, and medical devices where reliability and performance are crucial.

Equivalent

The AS6C8016-55ZIN is a 1M x 8-bit SRAM chip. Equivalent products include:
1. MT5C8016 - Micron Technology
2. CY7C199 - Cypress Semiconductor
3. IS61LV8016 - ISSI
4. W31500 - Winbond
Always verify compatibility regarding voltage, timing, and other specifications before substitution.

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