AS4C512M16D3LB-12BIN

The AS4C512M16D3LB-12BIN is a 512 Megabit (64 Megabytes) DDR3 SDRAM memory chip designed for high-performance applications. It features a 16-bit data width and operates at a speed of 1600 MT/s, making it suitable for various computing tasks, including PC memory modules and embedded systems.
This DRAM chip is built on a 12nm process and supports a voltage supply of 1.5V, optimized for power efficiency without compromising performance. It utilizes a double data rate interface, allowing simultaneous data transfer on both the rising and falling edges of the clock signal, effectively doubling data throughput.
The AS4C512M16D3LB-12BIN supports multiple memory modes, such as burst mode and random access, and is compatible with various memory controllers. Enhanced features include a low power mode for energy savings and on-die termination (ODT) for improved signal integrity.
This memory device is commonly used in applications such as laptops, desktops, servers, and industrial equipment, where reliable and efficient memory performance is essential.

The AS4C512M16D3LB-12BIN is a 4Gb (512M x 16) DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip. Key features include:
- Memory Configuration: 512M x 16-bit organization.
- Data Rate: Operates at DDR3 speeds, supporting data rates up to 1600 MT/s.
- Voltage: Operates at 1.5V typical supply voltage, with a low power variant at 1.35V (DDR3L).
- Package Type: Available in a standard 78-ball VFBGA (Very Fine Ball Grid Array) package.
- Latency: Typically has CAS latency (CL) values of 11, 10, or 9 depending on the operating speed and configuration.
- Temperature Range: Industrial temperature range (-40°C to +95°C) for robust applications.
- Applications: Suitable for various applications including consumer electronics, networking equipment, and automotive systems.
This memory module is designed for high performance and low power consumption, making it ideal for modern computing needs.

The AS4C512M16D3LB-12BIN is a DDR3 SDRAM memory chip typically packaged in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) format. This package type is designed for high-density applications, providing efficient space utilization on PCBs.

The AS4C512M16D3LB-12BIN is a DRAM chip with a pin count of 78. It is a DDR3 SDRAM device organized as 512 Meg x 16 bits. The primary function of this memory chip is to provide high-speed data storage and retrieval for various electronic applications, such as servers, networking equipment, and consumer electronics. It operates at a data rate of 1600 MT/s and has a supply voltage of 1.5V, designed for efficient power consumption. The chip supports burst lengths of 4 and 8, which enhances performance in data transfer operations.

The manufacturer of the AS4C512M16D3LB-12BIN is Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in the design, manufacturing, and distribution of memory solutions, including DRAM (Dynamic Random Access Memory) and SRAM (Static Random Access Memory). They provide a range of memory products for various applications, including consumer electronics, automotive, industrial, and telecommunications. The company focuses on offering high-quality, cost-effective memory solutions to meet the needs of its customers in a competitive market.

The AS4C512M16D3LB-12BIN is a 512Mb DDR3 SDRAM memory chip commonly used in applications such as telecommunications, consumer electronics, networking equipment, automotive systems, and industrial devices. Its high-speed performance and low power consumption make it suitable for use in laptops, desktops, tablets, and embedded systems, enabling efficient data processing and storage in various electronic devices.

The AS4C512M16D3LB-12BIN is a DDR3 SDRAM chip with specific characteristics. Equivalent products include:
1. MT41K512M16HA-125
2. Hynix H5TQ2G83EFR
3. K4B4G0846F-BCK0
Ensure compatibility in terms of speed, voltage, and pin configuration when selecting alternatives.