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AS4C256M16D3LC-12BIN

Name: AS4C256M16D3LC-12BIN
Rating: 4.7 (12 reviews)

IC DRAM 4GBIT PARALLEL 96FBGA

Производитель
Мфр. Часть #AS4C256M16D3LC-12BIN
Пакет 96-TFBGA
Лист данных AS4C256M16D3LC-12BIN DataSheet
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Спецификации

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR3L
MemorySize	4Gb (256M x 16)
MemoryInterface	Parallel
ClockFrequency	800 MHz
WriteCycleTime-WordPage	15ns
AccessTime	20 ns
Voltage-Supply	1.283V ~ 1.45V
OperatingTemperature	-40°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	96-TFBGA

Обзор

Description

The AS4C256M16D3LC-12BIN is a 4Gb (gigabit) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip designed for high-performance computing applications. It features a 16-bit data width and operates at a maximum clock frequency of 1600 MT/s (mega transfers per second), supporting DDR3-1600 speed. The chip comes in a compact 78-ball TFBGA (Thin Fine Ball Grid Array) package, making it suitable for space-constrained designs.
Key characteristics include a low voltage operation of 1.5V, which helps reduce power consumption while maintaining high performance. It is ideal for use in various applications such as servers, desktops, laptops, and networking devices. The AS4C256M16D3LC-12BIN also supports features like on-die termination and burst lengths of 8, enhancing its efficiency in data processing.
Overall, this DDR3 memory chip is a reliable choice for enhancing system performance in a wide range of electronic devices.

Features

The AS4C256M16D3LC-12BIN is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module with a capacity of 2GB, organized as 256M x 16 bits. It operates at a clock speed of 1600 MT/s (megatransfers per second) and is built on a 12μm manufacturing process, ensuring energy efficiency. The memory uses a 1.5V power supply, complying with low-power standards.
Key features include:
- Data Rate: DDR3 1600 MT/s
- Density: 2GB (256M x 16)
- Organization: x16
- Package Type: TSOP II
- Operating Voltage: 1.5V
- Temperature Range: Commercial (-0°C to +85°C)
- Burst Length: 8
- Latency: CL=11
This chip is suitable for various applications, including personal computers, laptops, and networking devices, offering a balance of performance and power efficiency.

Package

The AS4C256M16D3LC-12BIN is available in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) package type.

Pinout

The AS4C256M16D3LC-12BIN is a 256Mbit DDR3 SDRAM memory chip organized as 16 bits wide (16 bits x 16 banks). It has a total of 84 pins.
The primary functions of these pins include power supply (VDD, VSS), data input/output (DQ pins), address input (A0-A13, BA0-BA2), control signals (CLK, CK, CKE, CS, RAS, CAS, WE), and other functions like reset (RESET) and output enable (OE). The chip operates with a supply voltage of 1.5V and supports various DDR3 memory operations, making it suitable for high-performance applications.
For specific pin configurations and detailed functions, refer to the manufacturer's datasheet.

Manufacturer

The AS4C256M16D3LC-12BIN is manufactured by Alliance Semiconductor Corporation. Alliance Semiconductor specializes in designing and manufacturing high-performance semiconductor solutions, particularly in the memory and storage sectors. The company focuses on providing a wide range of memory products, including DRAM, SRAM, and Flash memory, catering to various applications such as consumer electronics, automotive, industrial, and telecommunications. Established in the 1990s, Alliance has positioned itself as a key player in the semiconductor industry, emphasizing innovation and quality in its product offerings.

Application

The AS4C256M16D3LC-12BIN is a 256Mb DDR3 SDRAM memory chip. It is commonly used in various applications, including consumer electronics (such as smartphones and tablets), laptops, networking equipment, servers, and industrial PCs. Its high-speed performance and low power consumption also make it suitable for gaming consoles and embedded systems requiring efficient memory solutions.

Equivalent

The AS4C256M16D3LC-12BIN is a 256Mb DDR3 SDRAM chip with a 16-bit data width and a speed grade of 12. Equivalent products include:
1. Hynix H5TQ2G83EFR-PBA
2. Micron MT41K256M16HA-125
3. Samsung K4B4G1646E-BCK0
Always verify compatibility with your specific application as specifications may vary.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.