Изображения являются только для ссылки

APT30D60BG

Name: APT30D60BG
Rating: 4.7 (12 reviews)

DIODE STD 600V 30A TO247 [B]

Производитель
Мфр. Часть #APT30D60BG
Пакет
Лист данных
В наличии9123

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Part Status	Active
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	30A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 30 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	250 µA @ 600 V
Mounting Type	Through Hole
Package / Case	TO-247-2
Supplier Device Package	TO-247 [B]
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	APT30D60
Reverse Recovery Time (trr)	85 ns

Обзор

Description

The APT30D60BG is a high-performance power MOSFET specifically designed for applications requiring efficient switching and high reliability. It features a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 30A, making it suitable for medium to high power applications such as power supplies, motor drives, and automotive power management systems.
This MOSFET is characterized by low on-resistance (RDS(on)), which enhances its efficiency by minimizing power loss during operation. It also has a fast switching speed, enabling it to handle high-frequency applications effectively. The APT30D60BG is typically housed in a TO-220 package, facilitating easy thermal management and integration into various circuit designs.
With its robust performance characteristics, the APT30D60BG is widely used in industrial and consumer electronics, making it a reliable choice for engineers looking to improve energy efficiency and performance in their designs.

Features

The APT30D60BG is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications, including motor drives, power supplies, and inverters. Key features include:
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: 30A, allowing for substantial load handling.
3. Low Switching Losses: Enhanced efficiency in high-frequency operations.
4. Thermal Performance: Robust thermal stability, facilitating reliable operation at elevated temperatures.
5. Fast Switching Speed: Reduces the risk of overheating and improves overall efficiency.
6. Integrated Gate-Emitter Protection: Increases reliability and protects against voltage spikes.
7. Compact Package: Often available in TO-220 or similar packages, ensuring easy integration into circuits.
These features make the APT30D60BG suitable for demanding applications in industrial and renewable energy sectors.

Package

The APT30D60BG is typically available in a TO-247 package type. This package design provides efficient thermal performance and is suitable for high-power applications.

Pinout

The APT30D60BG is a 600V, 30A N-channel IGBT (Insulated Gate Bipolar Transistor). It typically features a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the device.
2. Collector (C): The main current-carrying terminal, where the load is connected.
3. Emitter (E): The terminal through which the current exits the device.
The arrangement often includes pins for the gate, collector, and emitter, facilitating easy integration into power electronic circuits. The IGBT is used in applications such as inverters, motor drives, and power supplies due to its efficient switching capabilities and high-voltage handling.

Manufacturer

The manufacturer of the APT30D60BG is APT (Advanced Power Technology), which is a subsidiary of Microchip Technology Inc. APT specializes in the design and production of power semiconductor devices, including insulated gate bipolar transistors (IGBTs) and power MOSFETs. The company primarily serves industries such as automotive, renewable energy, industrial automation, and consumer electronics. APT is known for its focus on high-performance power solutions and innovative technologies that enhance energy efficiency and system reliability.

Application

The APT30D60BG is a high-performance IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial motor drives, power inverters, and switch-mode power supplies. It is suitable for high-efficiency power conversion and control in renewable energy systems, such as solar and wind power, as well as in HVAC systems and induction heating. Its ability to handle high voltage and current makes it ideal for large-scale power applications.

Equivalent

The APT30D60BG is a 600V, 30A IGBT module. Equivalent products include the Infineon IGBT series, such as the FGH30N60SMD, the ON Semiconductor NGTB30N60, and the Mitsubishi CM30DY-24H. Always verify specifications for compatibility in specific applications.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.