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AON5820

Name: AON5820
Rating: 4.7 (12 reviews)

MOSFET 2N-CH 20V 10A 6DFN

Производитель
Мфр. Часть #AON5820
Пакет
Лист данных AON5820 DataSheet
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Спецификации

Part Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	10A
Rds On (Max) @ Id, Vgs	9.5mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1510pF @ 10V
Power - Max	1.7W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-WFDFN Exposed Pad
Supplier Device Package	6-DFN-EP (2x5)
Base Product Number	AON582

Обзор

Description

AON5820 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance, which minimizes power loss and improves thermal performance. Commonly used in DC-DC converters, power supplies, and load switch applications, AON5820 can handle high current loads while maintaining stable operation.
The device operates with a wide range of gate voltages, enhancing its compatibility with various control circuits. Its compact package design allows for space-efficient layouts in circuit boards, making it ideal for consumer electronics, automotive, and industrial applications.
Key specifications include low threshold voltage, high-speed switching capabilities, and robust thermal performance, ensuring reliable operation in demanding environments. Overall, AON5820 is a versatile component for engineers looking to optimize power efficiency and reliability in their designs.

Features

AON5820 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 90A, allowing it to handle significant power loads.
3. On-Resistance: The low on-resistance (R_DS(on)) of approximately 2.5 mΩ at V_GS = 10V contributes to efficient power management and reduced heat generation.
4. Gate Threshold Voltage: With a gate threshold voltage (V_GS(th)) of 1.2V to 2.5V, it is designed for easy driving with low gate voltage.
5. Package: Available in a TO-220 package, it allows for effective heat dissipation.
6. Applications: Commonly used in power management, motor drives, and DC-DC converters due to its high efficiency and thermal performance.
These features make the AON5820 suitable for both consumer electronics and industrial applications.

Package

The AON5820 is packaged in a SO-8 (Small Outline) surface-mount configuration. This type of package is designed for efficient heat dissipation and compact space usage in electronic circuits.

Pinout

The AON5820 is a low-power, highly integrated System-on-Chip (SoC) designed for Bluetooth Low Energy applications. It features a total of 32 pins.
Key functions of the AON5820 include:
1. Bluetooth Connectivity: It supports Bluetooth 5.0, enabling efficient wireless communication.
2. Microcontroller: Integrated ARM Cortex-M4 processor for running applications.
3. GPIOs: General-purpose input/output pins for interfacing with other devices.
4. Analog Interfaces: Includes ADCs (Analog-to-Digital Converters) for sensor readings.
5. Power Management: Features low-power modes and regulators for energy efficiency.
6. UART, SPI, I2C interfaces: For communication with external peripherals.
This combination of features makes the AON5820 suitable for various IoT applications, wearable devices, and smart home products.

Manufacturer

The AON5820 is manufactured by AON Semiconductor, which specializes in the design and fabrication of power management and analog semiconductor solutions. AON Semiconductor primarily focuses on supplying high-performance MOSFETs and other analog devices used in various applications, including power supplies, electric vehicles, and renewable energy systems. The company is known for its innovation in providing efficient and reliable semiconductor products to meet the demands of modern electronic applications.

Application

AON5820 is a power MOSFET commonly used in applications such as power management, DC-DC converters, battery management systems, and load switching. Its low on-resistance and high efficiency make it suitable for consumer electronics, automotive systems, and renewable energy systems. Additionally, it can be utilized in high-frequency applications and for thermal management in various electronic devices.

Equivalent

The AON5820 chip is a low-power Bluetooth Low Energy (BLE) solution. Equivalent products include the Nordic Semiconductor nRF52810, nRF52832, and nRF52840; the Texas Instruments CC2640R2F; and the Dialog Semiconductor DA14531. These alternatives also offer low power consumption and BLE capabilities suitable for IoT applications.

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